Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors

D. S. Wuu; C. C. Lin; Ray-Hua Horng; F. C. Liao; Y. H. Liu

doi:10.1116/1.1420205

Etching characteristics and plasma-induced damage of high-k Ba_0.5Sr_0.5TiO₃ thin-film capacitors

D. S. Wuu^*, C. C. Lin, Ray-Hua Horng, F. C. Liao, Y. H. Liu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The etching characteristics and plasma-induced damage of high-k BST were studied by inductively coupled plasma (ICP) using CL₂/Ar gas mixtures. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various CL₂/Ar gas mixtures. In general, leakage current increased with increasing the ICP power or substrate bias rf power.

Original language	English
Pages (from-to)	2231-2236
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	6
DOIs	https://doi.org/10.1116/1.1420205
State	Published - 1 Nov 2001

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title = "Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors",

abstract = "The etching characteristics and plasma-induced damage of high-k BST were studied by inductively coupled plasma (ICP) using CL2/Ar gas mixtures. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various CL2/Ar gas mixtures. In general, leakage current increased with increasing the ICP power or substrate bias rf power.",

author = "Wuu, {D. S.} and Lin, {C. C.} and Ray-Hua Horng and Liao, {F. C.} and Liu, {Y. H.}",

year = "2001",

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T1 - Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors

AU - Wuu, D. S.

AU - Lin, C. C.

AU - Horng, Ray-Hua

AU - Liao, F. C.

AU - Liu, Y. H.

PY - 2001/11/1

Y1 - 2001/11/1

N2 - The etching characteristics and plasma-induced damage of high-k BST were studied by inductively coupled plasma (ICP) using CL2/Ar gas mixtures. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various CL2/Ar gas mixtures. In general, leakage current increased with increasing the ICP power or substrate bias rf power.

AB - The etching characteristics and plasma-induced damage of high-k BST were studied by inductively coupled plasma (ICP) using CL2/Ar gas mixtures. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various CL2/Ar gas mixtures. In general, leakage current increased with increasing the ICP power or substrate bias rf power.

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U2 - 10.1116/1.1420205

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SN - 1071-1023

VL - 19

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EP - 2236

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Etching characteristics and plasma-induced damage of high-k Ba_0.5Sr_0.5TiO₃ thin-film capacitors

Abstract

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