ESD-transient detection circuit with equivalent capacitance-coupling detection mechanism and high efficiency of layout area in a 65nm CMOS technology

Chih Ting Yeh, Ming-Dou Ker

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    A new power-rail ESD clamp circuit designed with equivalent capacitance-coupling detection mechanism and high efficiency of layout area has been proposed and verified in a 65nm 1.2V CMOS process. The proposed design has better immunity against mis-trigger or transient-induced latch-on event. The layout area and the standby leakage current of the proposed design are much superior to that of traditional RC-based power-rail ESD clamp circuit by both reducing ~46%.

    Original languageEnglish
    Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2013
    Number of pages7
    StatePublished - 10 Sep 2013
    Event2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013 - Las Vegas, NV, United States
    Duration: 8 Sep 201313 Sep 2013

    Publication series

    NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
    ISSN (Print)0739-5159

    Conference

    Conference2013 35th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2013
    Country/TerritoryUnited States
    CityLas Vegas, NV
    Period8/09/1313/09/13

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