ESD robustness of thin-film devices with different layout structures in LTPS technology

Chih Kang Deng; Ming-Dou Ker

doi:10.1016/j.microrel.2006.01.008

ESD robustness of thin-film devices with different layout structures in LTPS technology

Chih Kang Deng, Ming-Dou Ker^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The electrostatic discharge (ESD) robustness of different thin-film devices, including three diodes and two thin-film transistors (TFTs) in low-temperature polysilicon (LTPS) technology, is investigated. By using the transmission line pulse generator (TLPG), the high-current characteristics and the secondary breakdown current (It2) of these thin-film devices are observed. The experimental results with different parameters and layout structures of these LTPS thin-film devices have been evaluated for optimizing ESD protection design for liquid crystal display (LCD) panel.

Original language	English
Pages (from-to)	2067-2073
Number of pages	7
Journal	Microelectronics Reliability
Volume	46
Issue number	12
DOIs	https://doi.org/10.1016/j.microrel.2006.01.008
State	Published - 1 Dec 2006

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title = "ESD robustness of thin-film devices with different layout structures in LTPS technology",

abstract = "The electrostatic discharge (ESD) robustness of different thin-film devices, including three diodes and two thin-film transistors (TFTs) in low-temperature polysilicon (LTPS) technology, is investigated. By using the transmission line pulse generator (TLPG), the high-current characteristics and the secondary breakdown current (It2) of these thin-film devices are observed. The experimental results with different parameters and layout structures of these LTPS thin-film devices have been evaluated for optimizing ESD protection design for liquid crystal display (LCD) panel.",

author = "Deng, {Chih Kang} and Ming-Dou Ker",

year = "2006",

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doi = "10.1016/j.microrel.2006.01.008",

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AU - Deng, Chih Kang

AU - Ker, Ming-Dou

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N2 - The electrostatic discharge (ESD) robustness of different thin-film devices, including three diodes and two thin-film transistors (TFTs) in low-temperature polysilicon (LTPS) technology, is investigated. By using the transmission line pulse generator (TLPG), the high-current characteristics and the secondary breakdown current (It2) of these thin-film devices are observed. The experimental results with different parameters and layout structures of these LTPS thin-film devices have been evaluated for optimizing ESD protection design for liquid crystal display (LCD) panel.

AB - The electrostatic discharge (ESD) robustness of different thin-film devices, including three diodes and two thin-film transistors (TFTs) in low-temperature polysilicon (LTPS) technology, is investigated. By using the transmission line pulse generator (TLPG), the high-current characteristics and the secondary breakdown current (It2) of these thin-film devices are observed. The experimental results with different parameters and layout structures of these LTPS thin-film devices have been evaluated for optimizing ESD protection design for liquid crystal display (LCD) panel.

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U2 - 10.1016/j.microrel.2006.01.008

DO - 10.1016/j.microrel.2006.01.008

M3 - Article

AN - SCOPUS:33748948741

SN - 0026-2714

VL - 46

SP - 2067

EP - 2073

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

IS - 12

ER -

ESD robustness of thin-film devices with different layout structures in LTPS technology

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