ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

Chun Yu Lin; Li Wei Chu; Ming-Dou Ker; Ming Hsiang Song; Chewn Pu Jou; Tse Hua Lu; Jen Chou Tseng; Ming Hsien Tsai; Tsun Lai Hsu; Ping Fang Hung; Tzu Heng Chang

doi:10.1109/IRPS.2012.6241893

ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

Chun Yu Lin^*, Li Wei Chu, Ming-Dou Ker, Ming Hsiang Song, Chewn Pu Jou, Tse Hua Lu, Jen Chou Tseng, Ming Hsien Tsai, Tsun Lai Hsu, Ping Fang Hung, Tzu Heng Chang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.

Original language	English
Title of host publication	2012 IEEE International Reliability Physics Symposium, IRPS 2012
DOIs	https://doi.org/10.1109/IRPS.2012.6241893
State	Published - 28 Sep 2012
Event	2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States Duration: 15 Apr 2012 → 19 Apr 2012

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	2012 IEEE International Reliability Physics Symposium, IRPS 2012
Country/Territory	United States
City	Anaheim, CA
Period	15/04/12 → 19/04/12

Keywords

Electrostatic discharge (ESD)
radio-frequency (RF)
silicon-controlled rectifier (SCR)

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10.1109/IRPS.2012.6241893

Cite this

Lin, C. Y., Chu, L. W., Ker, M-D., Song, M. H., Jou, C. P., Lu, T. H., Tseng, J. C., Tsai, M. H., Hsu, T. L., Hung, P. F., & Chang, T. H. (2012). ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process. In 2012 IEEE International Reliability Physics Symposium, IRPS 2012 [6241893] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2012.6241893

@inproceedings{b33dd421b2f9438682d766adf81a07a4,

title = "ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process",

abstract = "To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.",

keywords = "Electrostatic discharge (ESD), radio-frequency (RF), silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Chu, {Li Wei} and Ming-Dou Ker and Song, {Ming Hsiang} and Jou, {Chewn Pu} and Lu, {Tse Hua} and Tseng, {Jen Chou} and Tsai, {Ming Hsien} and Hsu, {Tsun Lai} and Hung, {Ping Fang} and Chang, {Tzu Heng}",

year = "2012",

month = sep,

day = "28",

doi = "10.1109/IRPS.2012.6241893",

language = "English",

isbn = "9781457716799",

series = "IEEE International Reliability Physics Symposium Proceedings",

booktitle = "2012 IEEE International Reliability Physics Symposium, IRPS 2012",

note = "2012 IEEE International Reliability Physics Symposium, IRPS 2012 ; Conference date: 15-04-2012 Through 19-04-2012",

}

Lin, CY, Chu, LW, Ker, M-D, Song, MH, Jou, CP, Lu, TH, Tseng, JC, Tsai, MH, Hsu, TL, Hung, PF & Chang, TH 2012, ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process. in 2012 IEEE International Reliability Physics Symposium, IRPS 2012., 6241893, IEEE International Reliability Physics Symposium Proceedings, 2012 IEEE International Reliability Physics Symposium, IRPS 2012, Anaheim, CA, United States, 15/04/12. https://doi.org/10.1109/IRPS.2012.6241893

ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process. / Lin, Chun Yu; Chu, Li Wei; Ker, Ming-Dou et al.
2012 IEEE International Reliability Physics Symposium, IRPS 2012. 2012. 6241893 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

AU - Lin, Chun Yu

AU - Chu, Li Wei

AU - Ker, Ming-Dou

AU - Song, Ming Hsiang

AU - Jou, Chewn Pu

AU - Lu, Tse Hua

AU - Tseng, Jen Chou

AU - Tsai, Ming Hsien

AU - Hsu, Tsun Lai

AU - Hung, Ping Fang

AU - Chang, Tzu Heng

PY - 2012/9/28

Y1 - 2012/9/28

N2 - To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.

AB - To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.

KW - Electrostatic discharge (ESD)

KW - radio-frequency (RF)

KW - silicon-controlled rectifier (SCR)

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M3 - Conference contribution

AN - SCOPUS:84866632420

SN - 9781457716799

T3 - IEEE International Reliability Physics Symposium Proceedings

BT - 2012 IEEE International Reliability Physics Symposium, IRPS 2012

T2 - 2012 IEEE International Reliability Physics Symposium, IRPS 2012

Y2 - 15 April 2012 through 19 April 2012

ER -

ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

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