A new ESD protection structure of HVPSCR embedded into the high-voltage PMOS device is proposed to greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional N+ diffusion into the drain region of HVPMOS, the It2 of output cell has been greatly improved form 0.07A to be greater than 6A within the almost same layout area. Such an ESD-enhanced VFD driver IC has been in mass production for automotive applications in car to sustain HBM ESD stress of up to 8kV.
|Number of pages||4|
|State||Published - Jun 2005|
|Event||12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 - Singapore, Singapore|
Duration: 27 Jun 2005 → 1 Jul 2005
|Conference||12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005|
|Period||27/06/05 → 1/07/05|