ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications

Ming-Dou Ker; Wei Jen Chang; Marcus Yang; Cheng Chung Chen; Mu Chin Chan; Wuu Trong Shieh; Kuo Lung Yen

doi:10.1109/IPFA.2005.1469133

ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications

Ming-Dou Ker^*, Wei Jen Chang, Marcus Yang, Cheng Chung Chen, Mu Chin Chan, Wuu Trong Shieh, Kuo Lung Yen

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

A new ESD protection structure of HVPSCR embedded into the high-voltage PMOS device is proposed to greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional N+ diffusion into the drain region of HVPMOS, the It2 of output cell has been greatly improved form 0.07A to be greater than 6A within the almost same layout area. Such an ESD-enhanced VFD driver IC has been in mass production for automotive applications in car to sustain HBM ESD stress of up to 8kV.

Original language	English
Pages	67-70
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2005.1469133
State	Published - Jun 2005
Event	12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 - Singapore, Singapore Duration: 27 Jun 2005 → 1 Jul 2005

Conference

Conference	12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005
Country/Territory	Singapore
City	Singapore
Period	27/06/05 → 1/07/05

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10.1109/IPFA.2005.1469133

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Ker, M.-D., Chang, W. J., Yang, M., Chen, C. C., Chan, M. C., Shieh, W. T., & Yen, K. L. (2005). ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications. 67-70. Paper presented at 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005, Singapore, Singapore. https://doi.org/10.1109/IPFA.2005.1469133

@conference{d85bd20d6574455f9672b8de3441ed55,

title = "ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications",

abstract = "A new ESD protection structure of HVPSCR embedded into the high-voltage PMOS device is proposed to greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional N+ diffusion into the drain region of HVPMOS, the It2 of output cell has been greatly improved form 0.07A to be greater than 6A within the almost same layout area. Such an ESD-enhanced VFD driver IC has been in mass production for automotive applications in car to sustain HBM ESD stress of up to 8kV.",

author = "Ming-Dou Ker and Chang, {Wei Jen} and Marcus Yang and Chen, {Cheng Chung} and Chan, {Mu Chin} and Shieh, {Wuu Trong} and Yen, {Kuo Lung}",

year = "2005",

month = jun,

doi = "10.1109/IPFA.2005.1469133",

language = "English",

pages = "67--70",

note = "12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 ; Conference date: 27-06-2005 Through 01-07-2005",

}

Ker, M-D, Chang, WJ, Yang, M, Chen, CC, Chan, MC, Shieh, WT & Yen, KL 2005, 'ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications', Paper presented at 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005, Singapore, Singapore, 27/06/05 - 1/07/05 pp. 67-70. https://doi.org/10.1109/IPFA.2005.1469133

ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications. / Ker, Ming-Dou; Chang, Wei Jen; Yang, Marcus et al.
2005. 67-70 Paper presented at 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005, Singapore, Singapore.

Research output: Contribution to conference › Paper › peer-review

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AU - Chang, Wei Jen

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AU - Chen, Cheng Chung

AU - Chan, Mu Chin

AU - Shieh, Wuu Trong

AU - Yen, Kuo Lung

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AB - A new ESD protection structure of HVPSCR embedded into the high-voltage PMOS device is proposed to greatly improve ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional N+ diffusion into the drain region of HVPMOS, the It2 of output cell has been greatly improved form 0.07A to be greater than 6A within the almost same layout area. Such an ESD-enhanced VFD driver IC has been in mass production for automotive applications in car to sustain HBM ESD stress of up to 8kV.

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T2 - 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005

Y2 - 27 June 2005 through 1 July 2005

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ESD protection structure with embedded high-voltage P-type SCR for automotive vacuum-fluorescent-display (VFD) applications

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