TY - GEN
T1 - ESD protection design with The Low-Leakage-Current Diode String for RF circuits in BiCMOS SiGe process
AU - Ker, Ming-Dou
AU - Wu, Woei Lin
PY - 2005/9
Y1 - 2005/9
N2 - The Low-Leakage-Current Diode String (LLCDS) in a BiCMOS SiGe process is proposed for on-chip ESD protection design in RF circuits. With an additional bias resistance, a voltage is applied to the n-well of diode string resulting in a significant reduction in the leakage current of the diode string under normal circuit operating conditions. The leakage current of LLCDS can be minimized under some selected bias resistance, which can be calculated from the derived equations. Such LLCDS can be used in the power-rail ESD clamp circuit, in cooperation with the small double diodes in the I/O pads, to achieve whole-chip ESD protection for RF ICs in SiGe process. Copyright 2005
AB - The Low-Leakage-Current Diode String (LLCDS) in a BiCMOS SiGe process is proposed for on-chip ESD protection design in RF circuits. With an additional bias resistance, a voltage is applied to the n-well of diode string resulting in a significant reduction in the leakage current of the diode string under normal circuit operating conditions. The leakage current of LLCDS can be minimized under some selected bias resistance, which can be calculated from the derived equations. Such LLCDS can be used in the power-rail ESD clamp circuit, in cooperation with the small double diodes in the I/O pads, to achieve whole-chip ESD protection for RF ICs in SiGe process. Copyright 2005
UR - http://www.scopus.com/inward/record.url?scp=70449730549&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:70449730549
SN - 158537069X
SN - 9781585370696
T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
BT - 2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005
T2 - 2005 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2005
Y2 - 8 September 2005 through 16 September 2005
ER -