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ESD protection design with lateral DMOS transistor in 40-V BCD technology
Chang Tzu Wang
*
,
Ming-Dou Ker
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
37
Scopus citations
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Keyphrases
Electrostatic Discharge (ESD) Protection
100%
Protection Design
100%
LDMOS
100%
Bipolar-CMOS-DMOS (BCD) Process
100%
DMOS Transistor
100%
Electrostatic Discharge
50%
Gate Drive
50%
N-channel
25%
Circuit Techniques
25%
Protection Circuit
25%
Latch-up
25%
Power Rail
25%
Human Body Model
25%
Stacked Structure
25%
MOS Transistor
25%
Electrostatic Discharge Test
25%
Machine Model
25%
Stressful Events
25%
Output Driver
25%
Discharge Voltage
25%
Smart Power Integrated Circuits
25%
Smart Power Applications
25%
Material Science
Transistor
100%
Electronic Circuit
100%
Engineering
Electrostatic Discharge
100%
Power Rail
14%
Human Body Model
14%
Power Integrated Circuits
14%
Computer Science
Protection Design
100%
Integrated Circuit
33%