ESD protection design for wideband RF applications in 65-nm CMOS process

Li Wei Chu; Chun Yu Lin; Ming-Dou Ker; Ming Hsiang Song; Jen Chou Tseng; Chewn Pu Jou; Ming Hsien Tsai

doi:10.1109/ISCAS.2014.6865426

ESD protection design for wideband RF applications in 65-nm CMOS process

Li Wei Chu, Chun Yu Lin, Ming-Dou Ker, Ming Hsiang Song, Jen Chou Tseng, Chewn Pu Jou, Ming Hsien Tsai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.

Original language	English
Title of host publication	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1480-1483
Number of pages	4
ISBN (Print)	9781479934324
DOIs	https://doi.org/10.1109/ISCAS.2014.6865426
State	Published - 1 Jan 2014
Event	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia Duration: 1 Jun 2014 → 5 Jun 2014

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Country/Territory	Australia
City	Melbourne, VIC
Period	1/06/14 → 5/06/14

Keywords

Diode
ESD
radio-frequency (RF)
T-coil
wideband

Access to Document

10.1109/ISCAS.2014.6865426

Cite this

Chu, L. W., Lin, C. Y., Ker, M.-D., Song, M. H., Tseng, J. C., Jou, C. P., & Tsai, M. H. (2014). ESD protection design for wideband RF applications in 65-nm CMOS process. In 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 (pp. 1480-1483). Article 6865426 (Proceedings - IEEE International Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2014.6865426

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title = "ESD protection design for wideband RF applications in 65-nm CMOS process",

abstract = "All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.",

keywords = "Diode, ESD, radio-frequency (RF), T-coil, wideband",

author = "Chu, {Li Wei} and Lin, {Chun Yu} and Ming-Dou Ker and Song, {Ming Hsiang} and Tseng, {Jen Chou} and Jou, {Chewn Pu} and Tsai, {Ming Hsien}",

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Chu, LW, Lin, CY, Ker, M-D, Song, MH, Tseng, JC, Jou, CP & Tsai, MH 2014, ESD protection design for wideband RF applications in 65-nm CMOS process. in 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014., 6865426, Proceedings - IEEE International Symposium on Circuits and Systems, Institute of Electrical and Electronics Engineers Inc., pp. 1480-1483, 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014, Melbourne, VIC, Australia, 1/06/14. https://doi.org/10.1109/ISCAS.2014.6865426

ESD protection design for wideband RF applications in 65-nm CMOS process. / Chu, Li Wei; Lin, Chun Yu; Ker, Ming-Dou et al.
2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1480-1483 6865426 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chu, Li Wei

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AU - Jou, Chewn Pu

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N2 - All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.

AB - All wireless communication products must meet the reliability specifications during mass production. To prevent from electrostatic discharge (ESD) damages, the ESD protection designs must be added at all input/output pads in chip. Some ESD protection designs with low parasitic capacitance for radio-frequency (RF) applications are reviewed in this paper. Besides, a novel ESD protection design is proposed and realized in a 65nm CMOS process to protect the wideband RF circuits. In this work, diodes are used for ESD protection and inductors are used for high-frequency performance fine tuning. Experimental results of the test circuits have been successfully verified.

KW - Diode

KW - ESD

KW - radio-frequency (RF)

KW - T-coil

KW - wideband

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Chu LW, Lin CY, Ker MD, Song MH, Tseng JC, Jou CP et al. ESD protection design for wideband RF applications in 65-nm CMOS process. In 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1480-1483. 6865426. (Proceedings - IEEE International Symposium on Circuits and Systems). doi: 10.1109/ISCAS.2014.6865426

ESD protection design for wideband RF applications in 65-nm CMOS process

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