@inproceedings{45ca9dd1e871405dbae0c46b23949533,
title = "ESD protection design for mixed-voltage I/O buffer by using stacked-NMOS triggered SCR device",
abstract = "A new ESD protection circuit, by using the stacked-NMOS triggered silicon controlled rectifier (SNTSCR) as the ESD clamp device, is designed to protect the mixed-voltage I/O buffers of CMOS IC's. Without using the thick gate oxide, the experimental results in a 0.35 -μm CMOS process have proven that the human-body-model ESD level of the mixed-voltage I/O buffer can be successfully increased from the original ∼2kV to become 蠑8kV by using this new proposed ESD protection circuit.",
keywords = "Clamps, CMOS process, CMOS technology, Electrostatic discharge, Integrated circuit technology, MOS devices, Power supplies, Protection, Thyristors, Voltage",
author = "Ming-Dou Ker and Chuang, {Chien Hui} and Jiang, {Hsin Chin}",
year = "2001",
month = sep,
day = "11",
language = "English",
series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",
publisher = "ESD Association",
pages = "32--43",
booktitle = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2001",
note = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2001 ; Conference date: 11-09-2001 Through 13-09-2001",
}