ESD protection design for giga-Hz RF CMOS LNA with novel impedance-isolation technique

Ming-Dou Ker, Chien Ming Lee

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    12 Scopus citations

    Abstract

    A novel ESD protection design with impedance-isolation technique is proposed and successfully verified in a 0.25-μm CMOS process with top thick metal. Its purpose is to reduce the detrimental effect of the on-chip ESD protection circuit on the power gain and noise figure of an RF LNA circuit. With the resonance of LC-tank, the impedance generated from the ESD protection devices can be isolated from the input node of RF LNA at the operation frequency, so the power gain loss and noise figure of RF LNA can be successfully codesigned with the desired ESD robustness. The proposed ESD protection circuit with novel impedance-isolation technique will be one of the most effective ESD protection solutions for RF circuits in higher frequency band (>10GHz).

    Original languageEnglish
    Title of host publication2003 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003
    PublisherESD Association
    Number of pages10
    ISBN (Electronic)1585370576, 9781585370573
    StatePublished - Sep 2003
    Event25th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003 - Las Vegas, United States
    Duration: 21 Sep 200325 Sep 2003

    Publication series

    NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
    Volume2003-January
    ISSN (Print)0739-5159

    Conference

    Conference25th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003
    Country/TerritoryUnited States
    CityLas Vegas
    Period21/09/0325/09/03

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