ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR

Ming-Dou Ker; Chun Yu Lin; Guo Xuan Meng

doi:10.1109/ISCAS.2008.4541662

ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR

Ming-Dou Ker^*, Chun Yu Lin, Guo Xuan Meng

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Waffle-structured SCR (silicon-controlled rectifier) has been studied as an effective on-chip ESD (electrostatic discharge) protection device for CMOS RF (radio-frequency) circuits. In this work, a novel on-chip ESD protection strategy using the waffle-structured SCR is proposed and co-designed with a CMOS UWB (ultra-wideband) PA (power amplifier). Before ESD stress, the RF performances of the ESD-protected PA have been demonstrated to be as well as that of the unprotected PA. After ESD stress, the unprotected PA was seriously degraded, whereas the ESD-protected PA was keeping the performances well.

Original language	English
Title of host publication	2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Pages	1292-1295
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2008.4541662
State	Published - 19 Sep 2008
Event	2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 - Seattle, WA, United States Duration: 18 May 2008 → 21 May 2008

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Country/Territory	United States
City	Seattle, WA
Period	18/05/08 → 21/05/08

Access to Document

10.1109/ISCAS.2008.4541662

Cite this

@inproceedings{5652defa439b4d079e55656c8c138c20,

title = "ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR",

abstract = "Waffle-structured SCR (silicon-controlled rectifier) has been studied as an effective on-chip ESD (electrostatic discharge) protection device for CMOS RF (radio-frequency) circuits. In this work, a novel on-chip ESD protection strategy using the waffle-structured SCR is proposed and co-designed with a CMOS UWB (ultra-wideband) PA (power amplifier). Before ESD stress, the RF performances of the ESD-protected PA have been demonstrated to be as well as that of the unprotected PA. After ESD stress, the unprotected PA was seriously degraded, whereas the ESD-protected PA was keeping the performances well.",

author = "Ming-Dou Ker and Lin, {Chun Yu} and Meng, {Guo Xuan}",

year = "2008",

month = sep,

day = "19",

doi = "10.1109/ISCAS.2008.4541662",

language = "English",

isbn = "9781424416844",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

pages = "1292--1295",

booktitle = "2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008",

note = "2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 ; Conference date: 18-05-2008 Through 21-05-2008",

}

Ker, M-D, Lin, CY & Meng, GX 2008, ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR. in 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008., 4541662, Proceedings - IEEE International Symposium on Circuits and Systems, pp. 1292-1295, 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008, Seattle, WA, United States, 18/05/08. https://doi.org/10.1109/ISCAS.2008.4541662

ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR. / Ker, Ming-Dou; Lin, Chun Yu; Meng, Guo Xuan.
2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008. 2008. p. 1292-1295 4541662 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR

AU - Ker, Ming-Dou

AU - Lin, Chun Yu

AU - Meng, Guo Xuan

PY - 2008/9/19

Y1 - 2008/9/19

N2 - Waffle-structured SCR (silicon-controlled rectifier) has been studied as an effective on-chip ESD (electrostatic discharge) protection device for CMOS RF (radio-frequency) circuits. In this work, a novel on-chip ESD protection strategy using the waffle-structured SCR is proposed and co-designed with a CMOS UWB (ultra-wideband) PA (power amplifier). Before ESD stress, the RF performances of the ESD-protected PA have been demonstrated to be as well as that of the unprotected PA. After ESD stress, the unprotected PA was seriously degraded, whereas the ESD-protected PA was keeping the performances well.

AB - Waffle-structured SCR (silicon-controlled rectifier) has been studied as an effective on-chip ESD (electrostatic discharge) protection device for CMOS RF (radio-frequency) circuits. In this work, a novel on-chip ESD protection strategy using the waffle-structured SCR is proposed and co-designed with a CMOS UWB (ultra-wideband) PA (power amplifier). Before ESD stress, the RF performances of the ESD-protected PA have been demonstrated to be as well as that of the unprotected PA. After ESD stress, the unprotected PA was seriously degraded, whereas the ESD-protected PA was keeping the performances well.

UR - http://www.scopus.com/inward/record.url?scp=51749096660&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2008.4541662

DO - 10.1109/ISCAS.2008.4541662

M3 - Conference contribution

AN - SCOPUS:51749096660

SN - 9781424416844

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

SP - 1292

EP - 1295

BT - 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008

T2 - 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008

Y2 - 18 May 2008 through 21 May 2008

ER -

ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this