ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness

Ming-Dou Ker; Wen Yu Lo; Chien Ming Lee; Chia Pei Chen; Hong Sing Kao

doi:10.1109/RFIC.2002.1012083

ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness

Ming-Dou Ker^*, Wen Yu Lo, Chien Ming Lee, Chia Pei Chen, Hong Sing Kao

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

31 Scopus citations

Abstract

This paper presents a state-of-art ESD protection design for RF circuit with a human-body-model (HBM) ESD robustness of 8k V. By including a turn-on efficient power-rails clamp circuit into the RF circuit, the ESD clamp devices of the RF input pin are operated in the forward-biased conduction, rather than the traditional junction breakdown condition. Therefore, the dimension of ESD devices for the RF input pin can be further downsized to reduce the input capacitance loading for the RF signal. This design has been successfully applied in a 900-MHz RF receiver and fabricated in 0.25-μm CMOS process with a thick top metal layer. The experimental results have confirmed that its ESD robustness is as high as >8 kV under the HBM ESD test.

Original language	English
Pages	427-430
Number of pages	4
DOIs	https://doi.org/10.1109/RFIC.2002.1012083
State	Published - 2002
Event	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States Duration: 2 Jun 2002 → 4 Jun 2002

Conference

Conference	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Seatle, WA
Period	2/06/02 → 4/06/02

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10.1109/RFIC.2002.1012083

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title = "ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness",

abstract = "This paper presents a state-of-art ESD protection design for RF circuit with a human-body-model (HBM) ESD robustness of 8k V. By including a turn-on efficient power-rails clamp circuit into the RF circuit, the ESD clamp devices of the RF input pin are operated in the forward-biased conduction, rather than the traditional junction breakdown condition. Therefore, the dimension of ESD devices for the RF input pin can be further downsized to reduce the input capacitance loading for the RF signal. This design has been successfully applied in a 900-MHz RF receiver and fabricated in 0.25-μm CMOS process with a thick top metal layer. The experimental results have confirmed that its ESD robustness is as high as >8 kV under the HBM ESD test.",

author = "Ming-Dou Ker and Lo, {Wen Yu} and Lee, {Chien Ming} and Chen, {Chia Pei} and Kao, {Hong Sing}",

year = "2002",

doi = "10.1109/RFIC.2002.1012083",

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note = "2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 02-06-2002 Through 04-06-2002",

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T1 - ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness

AU - Ker, Ming-Dou

AU - Lo, Wen Yu

AU - Lee, Chien Ming

AU - Chen, Chia Pei

AU - Kao, Hong Sing

PY - 2002

Y1 - 2002

N2 - This paper presents a state-of-art ESD protection design for RF circuit with a human-body-model (HBM) ESD robustness of 8k V. By including a turn-on efficient power-rails clamp circuit into the RF circuit, the ESD clamp devices of the RF input pin are operated in the forward-biased conduction, rather than the traditional junction breakdown condition. Therefore, the dimension of ESD devices for the RF input pin can be further downsized to reduce the input capacitance loading for the RF signal. This design has been successfully applied in a 900-MHz RF receiver and fabricated in 0.25-μm CMOS process with a thick top metal layer. The experimental results have confirmed that its ESD robustness is as high as >8 kV under the HBM ESD test.

AB - This paper presents a state-of-art ESD protection design for RF circuit with a human-body-model (HBM) ESD robustness of 8k V. By including a turn-on efficient power-rails clamp circuit into the RF circuit, the ESD clamp devices of the RF input pin are operated in the forward-biased conduction, rather than the traditional junction breakdown condition. Therefore, the dimension of ESD devices for the RF input pin can be further downsized to reduce the input capacitance loading for the RF signal. This design has been successfully applied in a 900-MHz RF receiver and fabricated in 0.25-μm CMOS process with a thick top metal layer. The experimental results have confirmed that its ESD robustness is as high as >8 kV under the HBM ESD test.

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T2 - 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 2 June 2002 through 4 June 2002

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ESD protection design for 900-MHz RF receiver with 8-kV HBM ESD robustness

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