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ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Wei Min Wu
,
Ming Dou Ker
*
, Shih Hung Chen
, Arturo Sibaja-Hernandez
, Sachin Yadav
, Uthayasankaran Peralagu
, Hao Yu
, Ali Reza Alian
, Vamsi Putcha
, Bertrand Parvais
, Nadine Collaert
, Guido Groeseneken
*
Corresponding author for this work
Department of Microelectronics
Center for Neuromodulation Medical Electronics Systems
National Yang Ming Chiao Tung University
Institute of Electronics
Research output
:
Contribution to journal
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Article
›
peer-review
8
Scopus citations
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Keyphrases
Electrostatic Discharge
100%
High Electron Mobility Transistor
100%
Gallium Nitride
100%
Human Body Model
100%
Discharge Model
100%
CMOS Technology
14%
Transistor
14%
SPICE Model
14%
Reliability Issues
14%
I-V Characteristics
14%
Failure Mechanism
14%
TCAD Simulation
14%
Gas Resistance
14%
Transient Voltage
14%
RF System
14%
2-dimensional Electron Gas (2DEG)
14%
Voltage Waveform
14%
Failure Current
14%
Falling Edge
14%
Rising Edge
14%
Resistance Modulation
14%
Transient Discharge
14%
Discharge Mechanism
14%
Earth and Planetary Sciences
High Electron Mobility Transistors
100%
Management Information System
100%
Gallium Nitride
100%
Failure Mechanism
25%
Electron Gas
25%
Material Science
Transistor
100%
Electron Mobility
100%
Gallium Nitride
100%
Current-Voltage Characteristic
25%
Chemical Engineering
Gallium Nitride
100%