@inproceedings{84ba35df19f747ff9b0834b477b985db,
title = "ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs",
abstract = "We report on our extensive experimental and simulation study to understand ESD failure mechanisms in RF GaN-on-Si (MIS)HEMTs. As opposed to ESD clamp transistors in LV CMOS technologies, a mis-correlation between standard-defined HBM ESD robustness and commonly used TLP failure current was observed in GaN (MIS)HEMTs. Using transient HBM IV characteristics, a novel discharge model is proposed to explain the transient discharge mechanism. The TCAD and SPICE simulations confirmed that the observed mis-correlation between TLP and HBM is attributed to 2DEG channel resistance modulation in response to HBM ESD transient voltage waveforms.",
author = "Wu, {W. M.} and Chen, {S. H.} and A. Sibaja-Hernandez and S. Yadav and U. Peralagu and H. Yu and A. Alian and V. Putcha and B. Parvais and G. Groeseneken and Ker, {M. D.} and N. Collaert",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",
year = "2021",
doi = "10.1109/IEDM19574.2021.9720581",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "39.5.1--39.5.4",
booktitle = "2021 IEEE International Electron Devices Meeting, IEDM 2021",
address = "美國",
}