ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications

Wei Min Wu*, Shih Hung Chen, Vamsi Putcha, Uthayasankaran Peralagu, Arturo Sibaja-Hernandez, Sachin Yadav, Bertrand Parvais, Alireza Alian, Nadine Collaert, Ming Dou Ker, Guido Groeseneken

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD performance. Measurement results indicate TLP failures are highly related to 2DEG channel driving capability. The impacts of different gate interfaces in the GaN (MIS)-HEMTs on failure mechanisms are the key factor of final ESD robustness.

Original languageEnglish
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)158537329X, 9781585373291
DOIs
StatePublished - 26 Sep 2021
Event43rd Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2021 - Tucson, United States
Duration: 26 Sep 20211 Oct 2021

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021

Conference

Conference43rd Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2021
Country/TerritoryUnited States
CityTucson
Period26/09/211/10/21

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