ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications

Wei Min Wu; Shih Hung Chen; Vamsi Putcha; Uthayasankaran Peralagu; Arturo Sibaja-Hernandez; Sachin Yadav; Bertrand Parvais; Alireza Alian; Nadine Collaert; Ming Dou Ker; Guido Groeseneken

doi:10.23919/EOS/ESD52038.2021.9574716

ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications

Wei Min Wu^*, Shih Hung Chen, Vamsi Putcha, Uthayasankaran Peralagu, Arturo Sibaja-Hernandez, Sachin Yadav, Bertrand Parvais, Alireza Alian, Nadine Collaert, Ming Dou Ker, Guido Groeseneken

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD performance. Measurement results indicate TLP failures are highly related to 2DEG channel driving capability. The impacts of different gate interfaces in the GaN (MIS)-HEMTs on failure mechanisms are the key factor of final ESD robustness.

Original language	English
Title of host publication	Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	158537329X, 9781585373291
DOIs	https://doi.org/10.23919/EOS/ESD52038.2021.9574716
State	Published - 26 Sep 2021
Event	43rd Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2021 - Tucson, United States Duration: 26 Sep 2021 → 1 Oct 2021

Publication series

Name	Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021

Conference

Conference	43rd Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2021
Country/Territory	United States
City	Tucson
Period	26/09/21 → 1/10/21

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10.23919/EOS/ESD52038.2021.9574716

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Wu, W. M., Chen, S. H., Putcha, V., Peralagu, U., Sibaja-Hernandez, A., Yadav, S., Parvais, B., Alian, A., Collaert, N., Ker, M. D., & Groeseneken, G. (2021). ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/EOS/ESD52038.2021.9574716

Wu, Wei Min ; Chen, Shih Hung ; Putcha, Vamsi et al. / ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications. Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021).

@inproceedings{bdfc6a04a61c4bf7b89b94252b78c6c9,

title = "ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications",

abstract = "In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD performance. Measurement results indicate TLP failures are highly related to 2DEG channel driving capability. The impacts of different gate interfaces in the GaN (MIS)-HEMTs on failure mechanisms are the key factor of final ESD robustness. ",

author = "Wu, {Wei Min} and Chen, {Shih Hung} and Vamsi Putcha and Uthayasankaran Peralagu and Arturo Sibaja-Hernandez and Sachin Yadav and Bertrand Parvais and Alireza Alian and Nadine Collaert and Ker, {Ming Dou} and Guido Groeseneken",

note = "Publisher Copyright: {\textcopyright} 2021 EOS/ESD Association, Inc.; null ; Conference date: 26-09-2021 Through 01-10-2021",

year = "2021",

month = sep,

day = "26",

doi = "10.23919/EOS/ESD52038.2021.9574716",

language = "English",

series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021",

address = "United States",

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Wu, WM, Chen, SH, Putcha, V, Peralagu, U, Sibaja-Hernandez, A, Yadav, S, Parvais, B, Alian, A, Collaert, N, Ker, MD & Groeseneken, G 2021, ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications. in Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021. Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021, Institute of Electrical and Electronics Engineers Inc., 43rd Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2021, Tucson, United States, 26/09/21. https://doi.org/10.23919/EOS/ESD52038.2021.9574716

ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications. / Wu, Wei Min; Chen, Shih Hung; Putcha, Vamsi et al.

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications

AU - Wu, Wei Min

AU - Chen, Shih Hung

AU - Putcha, Vamsi

AU - Peralagu, Uthayasankaran

AU - Sibaja-Hernandez, Arturo

AU - Yadav, Sachin

AU - Parvais, Bertrand

AU - Alian, Alireza

AU - Collaert, Nadine

AU - Ker, Ming Dou

AU - Groeseneken, Guido

PY - 2021/9/26

Y1 - 2021/9/26

N2 - In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD performance. Measurement results indicate TLP failures are highly related to 2DEG channel driving capability. The impacts of different gate interfaces in the GaN (MIS)-HEMTs on failure mechanisms are the key factor of final ESD robustness.

AB - In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD performance. Measurement results indicate TLP failures are highly related to 2DEG channel driving capability. The impacts of different gate interfaces in the GaN (MIS)-HEMTs on failure mechanisms are the key factor of final ESD robustness.

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U2 - 10.23919/EOS/ESD52038.2021.9574716

DO - 10.23919/EOS/ESD52038.2021.9574716

M3 - Conference contribution

AN - SCOPUS:85119080098

T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021

BT - Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 26 September 2021 through 1 October 2021

ER -

Wu WM, Chen SH, Putcha V, Peralagu U, Sibaja-Hernandez A, Yadav S et al. ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2021, EOS/ESD 2021). doi: 10.23919/EOS/ESD52038.2021.9574716

ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications

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