ESD-Event Detector for ESD Control Applications in Semiconductor Manufacturing Factories

I. Hsuan Wu; Ming Dou Ker

doi:10.1109/TEMC.2022.3195233

ESD-Event Detector for ESD Control Applications in Semiconductor Manufacturing Factories

I. Hsuan Wu, Ming Dou Ker

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

An electrostatic discharge (ESD)-event detector has been designed and fabricated in a single chip to detect and alarm the ESD events in semiconductor or integrated circuit (IC) manufacturing environments. The experiment measured results showed that the peak-to-peak voltage of the detected signal during an ESD event has a strong correlation with its ESD-stress voltage level. <bold>The proposed ESD-event detector can determine a</bold> detected <bold>signal to be an ESD pulse if its signal amplitude is higher than the settable threshold and its duration time is under 500 ns.</bold> The ESD-event detector circuit, including a <bold>450 MHz</bold> logarithmic amplifier, a comparator, and a time discriminator, has been implemented in a single chip with a total silicon area of only 693 × 563 <italic>μ</italic><inline-formula><tex-math notation="LaTeX">${\mathbf{m}}^2$</tex-math></inline-formula> and fabricated by 0.18-<italic>μ</italic>m CMOS process. <bold>The detector can detect high-frequency transient signals up to 450 MHz, which has been successfully verified in the field tests by detecting the signals generated from the ESD generators, the human-body model tester, and the field-induced charged-device model tester.</bold> The proposed ESD-event detector can efficiently perform the real-time ESD monitoring applications in the IC and semiconductor manufacturing factories.

Original language	English
Pages (from-to)	1-9
Number of pages	9
Journal	IEEE Transactions on Electromagnetic Compatibility
DOIs	https://doi.org/10.1109/TEMC.2022.3195233
State	Accepted/In press - 2022

Keywords

Charged-device model (CDM)
Current measurement
Detectors
electrostatic discharge (ESD)
Electrostatic discharges
ESD generator
ESD monitoring
ESD-event detector
Generators
human-body model (HBM)
logarithmic amplifier
Probes
Semiconductor device measurement
Transient analysis

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title = "ESD-Event Detector for ESD Control Applications in Semiconductor Manufacturing Factories",

abstract = "An electrostatic discharge (ESD)-event detector has been designed and fabricated in a single chip to detect and alarm the ESD events in semiconductor or integrated circuit (IC) manufacturing environments. The experiment measured results showed that the peak-to-peak voltage of the detected signal during an ESD event has a strong correlation with its ESD-stress voltage level. The proposed ESD-event detector can determine a detected signal to be an ESD pulse if its signal amplitude is higher than the settable threshold and its duration time is under 500 ns. The ESD-event detector circuit, including a 450 MHz logarithmic amplifier, a comparator, and a time discriminator, has been implemented in a single chip with a total silicon area of only 693 × 563 μ${\mathbf{m}}^2$ and fabricated by 0.18-μm CMOS process. The detector can detect high-frequency transient signals up to 450 MHz, which has been successfully verified in the field tests by detecting the signals generated from the ESD generators, the human-body model tester, and the field-induced charged-device model tester. The proposed ESD-event detector can efficiently perform the real-time ESD monitoring applications in the IC and semiconductor manufacturing factories.",

keywords = "Charged-device model (CDM), Current measurement, Detectors, electrostatic discharge (ESD), Electrostatic discharges, ESD generator, ESD monitoring, ESD-event detector, Generators, human-body model (HBM), logarithmic amplifier, Probes, Semiconductor device measurement, Transient analysis",

author = "Wu, {I. Hsuan} and Ker, {Ming Dou}",

note = "Publisher Copyright: IEEE",

year = "2022",

doi = "10.1109/TEMC.2022.3195233",

language = "English",

pages = "1--9",

journal = "IEEE Transactions on Electromagnetic Compatibility",

issn = "0018-9375",

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AU - Wu, I. Hsuan

AU - Ker, Ming Dou

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PY - 2022

Y1 - 2022

N2 - An electrostatic discharge (ESD)-event detector has been designed and fabricated in a single chip to detect and alarm the ESD events in semiconductor or integrated circuit (IC) manufacturing environments. The experiment measured results showed that the peak-to-peak voltage of the detected signal during an ESD event has a strong correlation with its ESD-stress voltage level. The proposed ESD-event detector can determine a detected signal to be an ESD pulse if its signal amplitude is higher than the settable threshold and its duration time is under 500 ns. The ESD-event detector circuit, including a 450 MHz logarithmic amplifier, a comparator, and a time discriminator, has been implemented in a single chip with a total silicon area of only 693 × 563 μ${\mathbf{m}}^2$ and fabricated by 0.18-μm CMOS process. The detector can detect high-frequency transient signals up to 450 MHz, which has been successfully verified in the field tests by detecting the signals generated from the ESD generators, the human-body model tester, and the field-induced charged-device model tester. The proposed ESD-event detector can efficiently perform the real-time ESD monitoring applications in the IC and semiconductor manufacturing factories.

AB - An electrostatic discharge (ESD)-event detector has been designed and fabricated in a single chip to detect and alarm the ESD events in semiconductor or integrated circuit (IC) manufacturing environments. The experiment measured results showed that the peak-to-peak voltage of the detected signal during an ESD event has a strong correlation with its ESD-stress voltage level. The proposed ESD-event detector can determine a detected signal to be an ESD pulse if its signal amplitude is higher than the settable threshold and its duration time is under 500 ns. The ESD-event detector circuit, including a 450 MHz logarithmic amplifier, a comparator, and a time discriminator, has been implemented in a single chip with a total silicon area of only 693 × 563 μ${\mathbf{m}}^2$ and fabricated by 0.18-μm CMOS process. The detector can detect high-frequency transient signals up to 450 MHz, which has been successfully verified in the field tests by detecting the signals generated from the ESD generators, the human-body model tester, and the field-induced charged-device model tester. The proposed ESD-event detector can efficiently perform the real-time ESD monitoring applications in the IC and semiconductor manufacturing factories.

KW - Charged-device model (CDM)

KW - Current measurement

KW - Detectors

KW - electrostatic discharge (ESD)

KW - Electrostatic discharges

KW - ESD generator

KW - ESD monitoring

KW - ESD-event detector

KW - Generators

KW - human-body model (HBM)

KW - logarithmic amplifier

KW - Probes

KW - Semiconductor device measurement

KW - Transient analysis

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JO - IEEE Transactions on Electromagnetic Compatibility

JF - IEEE Transactions on Electromagnetic Compatibility

ER -

ESD-Event Detector for ESD Control Applications in Semiconductor Manufacturing Factories

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