ESD buses for whole-chip ESD protection

Ming-Dou Ker; Hun Hsien Chang; Tung Yang Chen

doi:10.1109/ISCAS.1999.777949

ESD buses for whole-chip ESD protection

Ming-Dou Ker^*, Hun Hsien Chang, Tung Yang Chen

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

A novel whole-chip ESD (electrostatic discharge) protection design with multiple ESD buses has been proposed to solve the ESD protection issue in the CMOS IC which has more separated power pins. The ESD current in the CMOS IC is diverted into the ESD buses, therefore the ESD current is conducted by the ESD buses away from the internal circuits and quickly discharged through the ESD protection devices. By using the ESD buses, the CMOS IC with separated power pins can be safely protected against the ESD damages which is located in the internal circuits.

Original language	English
Title of host publication	Proceedings - IEEE International Symposium on Circuits and Systems
Publisher	IEEE
Pages	545-548
ISBN (Print)	0780354729
DOIs	https://doi.org/10.1109/ISCAS.1999.777949
State	Published - 1 Jan 1999
Event	Proceedings of the 1999 IEEE International Symposium on Circuits and Systems, ISCAS '99 - Orlando, FL, USA Duration: 30 May 1999 → 2 Jun 1999

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	1
ISSN (Print)	0271-4310

Conference

Conference	Proceedings of the 1999 IEEE International Symposium on Circuits and Systems, ISCAS '99
City	Orlando, FL, USA
Period	30/05/99 → 2/06/99

Access to Document

10.1109/ISCAS.1999.777949

Cite this

@inproceedings{35136e2270b449c483555262a0750f85,

title = "ESD buses for whole-chip ESD protection",

abstract = "A novel whole-chip ESD (electrostatic discharge) protection design with multiple ESD buses has been proposed to solve the ESD protection issue in the CMOS IC which has more separated power pins. The ESD current in the CMOS IC is diverted into the ESD buses, therefore the ESD current is conducted by the ESD buses away from the internal circuits and quickly discharged through the ESD protection devices. By using the ESD buses, the CMOS IC with separated power pins can be safely protected against the ESD damages which is located in the internal circuits.",

author = "Ming-Dou Ker and Chang, {Hun Hsien} and Chen, {Tung Yang}",

year = "1999",

month = jan,

day = "1",

doi = "10.1109/ISCAS.1999.777949",

language = "English",

isbn = "0780354729",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

publisher = "IEEE",

pages = "545--548",

booktitle = "Proceedings - IEEE International Symposium on Circuits and Systems",

note = "Proceedings of the 1999 IEEE International Symposium on Circuits and Systems, ISCAS '99 ; Conference date: 30-05-1999 Through 02-06-1999",

}

Ker, M-D, Chang, HH & Chen, TY 1999, ESD buses for whole-chip ESD protection. in Proceedings - IEEE International Symposium on Circuits and Systems. Proceedings - IEEE International Symposium on Circuits and Systems, vol. 1, IEEE, pp. 545-548, Proceedings of the 1999 IEEE International Symposium on Circuits and Systems, ISCAS '99, Orlando, FL, USA, 30/05/99. https://doi.org/10.1109/ISCAS.1999.777949

TY - GEN

T1 - ESD buses for whole-chip ESD protection

AU - Ker, Ming-Dou

AU - Chang, Hun Hsien

AU - Chen, Tung Yang

PY - 1999/1/1

Y1 - 1999/1/1

N2 - A novel whole-chip ESD (electrostatic discharge) protection design with multiple ESD buses has been proposed to solve the ESD protection issue in the CMOS IC which has more separated power pins. The ESD current in the CMOS IC is diverted into the ESD buses, therefore the ESD current is conducted by the ESD buses away from the internal circuits and quickly discharged through the ESD protection devices. By using the ESD buses, the CMOS IC with separated power pins can be safely protected against the ESD damages which is located in the internal circuits.

AB - A novel whole-chip ESD (electrostatic discharge) protection design with multiple ESD buses has been proposed to solve the ESD protection issue in the CMOS IC which has more separated power pins. The ESD current in the CMOS IC is diverted into the ESD buses, therefore the ESD current is conducted by the ESD buses away from the internal circuits and quickly discharged through the ESD protection devices. By using the ESD buses, the CMOS IC with separated power pins can be safely protected against the ESD damages which is located in the internal circuits.

UR - http://www.scopus.com/inward/record.url?scp=0347074395&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.1999.777949

DO - 10.1109/ISCAS.1999.777949

M3 - Conference contribution

AN - SCOPUS:0347074395

SN - 0780354729

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

SP - 545

EP - 548

BT - Proceedings - IEEE International Symposium on Circuits and Systems

PB - IEEE

T2 - Proceedings of the 1999 IEEE International Symposium on Circuits and Systems, ISCAS '99

Y2 - 30 May 1999 through 2 June 1999

ER -

ESD buses for whole-chip ESD protection

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this