Errors in threshold-voltage measurements of MOS transistors for dopant-profile determinations

Min Hwa Chi; Chen-Ming Hu

doi:10.1016/0038-1101(81)90023-X

Errors in threshold-voltage measurements of MOS transistors for dopant-profile determinations

Min Hwa Chi^*, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The dopant and trap density profiles in MOSFETs can be deduced from the static and transient variations of V_T caused by changes in V_BS. This letter reports a study of errors in V_T measurements by three different methods. Relatively small errors in V_T could cause serious inaccuracies in dopant profiles. It is found that the major source of errors is the non-constancy of the surface mobility and that errors in V_T measured by a "constant V_GS-V_DS method" cannot be eliminated easily. However, with properly chosen V_GS-V_T or I_D, a "constant I_D-V_DS method" can provide almost error-free measurements of V_T. The theoretical predictions agree with experiments.

Original language	English
Pages (from-to)	313-316
Number of pages	4
Journal	Solid State Electronics
Volume	24
Issue number	4
DOIs	https://doi.org/10.1016/0038-1101(81)90023-X
State	Published - 1 Jan 1981

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@article{d652b900aa4047748392b58f5b687744,

title = "Errors in threshold-voltage measurements of MOS transistors for dopant-profile determinations",

abstract = "The dopant and trap density profiles in MOSFETs can be deduced from the static and transient variations of VT caused by changes in VBS. This letter reports a study of errors in VT measurements by three different methods. Relatively small errors in VT could cause serious inaccuracies in dopant profiles. It is found that the major source of errors is the non-constancy of the surface mobility and that errors in VT measured by a {"}constant VGS-VDS method{"} cannot be eliminated easily. However, with properly chosen VGS-VT or ID, a {"}constant ID-VDS method{"} can provide almost error-free measurements of VT. The theoretical predictions agree with experiments.",

author = "Chi, {Min Hwa} and Chen-Ming Hu",

year = "1981",

month = jan,

day = "1",

doi = "10.1016/0038-1101(81)90023-X",

language = "English",

volume = "24",

pages = "313--316",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "4",

}

TY - JOUR

T1 - Errors in threshold-voltage measurements of MOS transistors for dopant-profile determinations

AU - Chi, Min Hwa

AU - Hu, Chen-Ming

PY - 1981/1/1

Y1 - 1981/1/1

N2 - The dopant and trap density profiles in MOSFETs can be deduced from the static and transient variations of VT caused by changes in VBS. This letter reports a study of errors in VT measurements by three different methods. Relatively small errors in VT could cause serious inaccuracies in dopant profiles. It is found that the major source of errors is the non-constancy of the surface mobility and that errors in VT measured by a "constant VGS-VDS method" cannot be eliminated easily. However, with properly chosen VGS-VT or ID, a "constant ID-VDS method" can provide almost error-free measurements of VT. The theoretical predictions agree with experiments.

AB - The dopant and trap density profiles in MOSFETs can be deduced from the static and transient variations of VT caused by changes in VBS. This letter reports a study of errors in VT measurements by three different methods. Relatively small errors in VT could cause serious inaccuracies in dopant profiles. It is found that the major source of errors is the non-constancy of the surface mobility and that errors in VT measured by a "constant VGS-VDS method" cannot be eliminated easily. However, with properly chosen VGS-VT or ID, a "constant ID-VDS method" can provide almost error-free measurements of VT. The theoretical predictions agree with experiments.

UR - http://www.scopus.com/inward/record.url?scp=0019552629&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(81)90023-X

DO - 10.1016/0038-1101(81)90023-X

M3 - Article

AN - SCOPUS:0019552629

VL - 24

SP - 313

EP - 316

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 4

ER -

Errors in threshold-voltage measurements of MOS transistors for dopant-profile determinations

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