Erratum: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100)
Yao Jen Lee*, Fu Kuo Hsueh, Michael I. Current, Ching Yi Wu, Tien Sheng Chao
Research output: Contribution to journal › Comment/debate
Fingerprint
Dive into the research topics of 'Erratum: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100)'. Together they form a unique fingerprint.