Erratum: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100)

Yao Jen Lee*, Fu Kuo Hsueh, Michael I. Current, Ching Yi Wu, Tien Sheng Chao

*Corresponding author for this work

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