Erratum: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100)

Yao Jen Lee; Fu Kuo Hsueh; Michael I. Current; Ching Yi Wu; Tien Sheng Chao

doi:10.1109/LED.2023.3271079

Erratum: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100)

Yao Jen Lee^*, Fu Kuo Hsueh, Michael I. Current, Ching Yi Wu, Tien Sheng Chao

^*Corresponding author for this work

Degree Program of Science

Research output: Contribution to journal › Comment/debate

Abstract

In The above letter [1], the SIMS profiles in Fig. 1 are for diffusion characteristics of ion-implanted phosphorus before/after MWA. We did not mention the concentration in the text of the letter. However, the dose listed in the figure caption is incorrect. The conclusions of this letter will not be impacted by the revision. In the caption of Fig. 1: SIMS profiles of P concentration are at a dose of 5 × 1015 ions/cm2.

Original language	English
Pages (from-to)	1015
Number of pages	1
Journal	Ieee Electron Device Letters
Volume	44
Issue number	6
DOIs	https://doi.org/10.1109/LED.2023.3271079
State	Published - 1 Jun 2023

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Lee, Y. J., Hsueh, F. K., Current, M. I., Wu, C. Y., & Chao, T. S. (2023). Erratum: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100). Ieee Electron Device Letters, 44(6), 1015. https://doi.org/10.1109/LED.2023.3271079

@article{dc8342d794d24229bdcf5b27d2d09131,

title = "Erratum: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100)",

abstract = "In The above letter [1], the SIMS profiles in Fig. 1 are for diffusion characteristics of ion-implanted phosphorus before/after MWA. We did not mention the concentration in the text of the letter. However, the dose listed in the figure caption is incorrect. The conclusions of this letter will not be impacted by the revision. In the caption of Fig. 1: SIMS profiles of P concentration are at a dose of 5 × 1015 ions/cm2.",

author = "Lee, {Yao Jen} and Hsueh, {Fu Kuo} and Current, {Michael I.} and Wu, {Ching Yi} and Chao, {Tien Sheng}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2023",

month = jun,

day = "1",

doi = "10.1109/LED.2023.3271079",

language = "English",

volume = "44",

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Lee, YJ, Hsueh, FK, Current, MI, Wu, CY & Chao, TS 2023, 'Erratum: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100)', Ieee Electron Device Letters, vol. 44, no. 6, pp. 1015. https://doi.org/10.1109/LED.2023.3271079

Erratum: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100). / Lee, Yao Jen; Hsueh, Fu Kuo; Current, Michael I. et al.
In: Ieee Electron Device Letters, Vol. 44, No. 6, 01.06.2023, p. 1015.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100)

AU - Lee, Yao Jen

AU - Hsueh, Fu Kuo

AU - Current, Michael I.

AU - Wu, Ching Yi

AU - Chao, Tien Sheng

PY - 2023/6/1

Y1 - 2023/6/1

N2 - In The above letter [1], the SIMS profiles in Fig. 1 are for diffusion characteristics of ion-implanted phosphorus before/after MWA. We did not mention the concentration in the text of the letter. However, the dose listed in the figure caption is incorrect. The conclusions of this letter will not be impacted by the revision. In the caption of Fig. 1: SIMS profiles of P concentration are at a dose of 5 × 1015 ions/cm2.

AB - In The above letter [1], the SIMS profiles in Fig. 1 are for diffusion characteristics of ion-implanted phosphorus before/after MWA. We did not mention the concentration in the text of the letter. However, the dose listed in the figure caption is incorrect. The conclusions of this letter will not be impacted by the revision. In the caption of Fig. 1: SIMS profiles of P concentration are at a dose of 5 × 1015 ions/cm2.

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U2 - 10.1109/LED.2023.3271079

DO - 10.1109/LED.2023.3271079

M3 - Comment/debate

AN - SCOPUS:85161513084

SN - 0741-3106

VL - 44

SP - 1015

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 6

ER -

Erratum: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal (IEEE Electron Device Lett. (2012) 33:2 (248–250) DOI: 10.1109/LED.2011.2176100)

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