Erratum: Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898)

Yao Jen Lee; Ta Chun Cho; Shang Shiun Chuang; Fu Kuo Hsueh; Yu Lun Lu; Po Jung Sung; Hsiu Chih Chen; Michael I. Current; Tseung-Yuen Tseng; Tien Sheng Chao; Chenming Hu; Fu Liang Yang

doi:10.1109/TED.2023.3272843

Erratum: Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898)

Yao Jen Lee^*, Ta Chun Cho, Shang Shiun Chuang, Fu Kuo Hsueh, Yu Lun Lu, Po Jung Sung, Hsiu Chih Chen, Michael I. Current, Tseung-Yuen Tseng, Tien Sheng Chao, Chenming Hu, Fu Liang Yang

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate

Abstract

The above article [1] presented data on microwave annealing of implanted ions in silicon. There are several typos in the figure captions and labels, and the authors would like to correct them. The text is correct, and the conclusion of [1] is not impacted by these revisions.

Original language	English
Pages (from-to)	3983
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	7
DOIs	https://doi.org/10.1109/TED.2023.3272843
State	Published - 1 Jul 2023

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Lee, Y. J., Cho, T. C., Chuang, S. S., Hsueh, F. K., Lu, Y. L., Sung, P. J., Chen, H. C., Current, M. I., Tseng, T.-Y., Chao, T. S., Hu, C., & Yang, F. L. (2023). Erratum: Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898). IEEE Transactions on Electron Devices, 70(7), 3983. https://doi.org/10.1109/TED.2023.3272843

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title = "Erratum: Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898)",

abstract = "The above article [1] presented data on microwave annealing of implanted ions in silicon. There are several typos in the figure captions and labels, and the authors would like to correct them. The text is correct, and the conclusion of [1] is not impacted by these revisions.",

author = "Lee, {Yao Jen} and Cho, {Ta Chun} and Chuang, {Shang Shiun} and Hsueh, {Fu Kuo} and Lu, {Yu Lun} and Sung, {Po Jung} and Chen, {Hsiu Chih} and Current, {Michael I.} and Tseung-Yuen Tseng and Chao, {Tien Sheng} and Chenming Hu and Yang, {Fu Liang}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2023",

month = jul,

day = "1",

doi = "10.1109/TED.2023.3272843",

language = "English",

volume = "70",

pages = "3983",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

Lee, YJ, Cho, TC, Chuang, SS, Hsueh, FK, Lu, YL, Sung, PJ, Chen, HC, Current, MI, Tseng, T-Y, Chao, TS , Hu, C & Yang, FL 2023, 'Erratum: Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898)', IEEE Transactions on Electron Devices, vol. 70, no. 7, pp. 3983. https://doi.org/10.1109/TED.2023.3272843

Erratum: Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898). / Lee, Yao Jen; Cho, Ta Chun; Chuang, Shang Shiun et al.
In: IEEE Transactions on Electron Devices, Vol. 70, No. 7, 01.07.2023, p. 3983.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898)

AU - Lee, Yao Jen

AU - Cho, Ta Chun

AU - Chuang, Shang Shiun

AU - Hsueh, Fu Kuo

AU - Lu, Yu Lun

AU - Sung, Po Jung

AU - Chen, Hsiu Chih

AU - Current, Michael I.

AU - Tseng, Tseung-Yuen

AU - Chao, Tien Sheng

AU - Hu, Chenming

AU - Yang, Fu Liang

PY - 2023/7/1

Y1 - 2023/7/1

N2 - The above article [1] presented data on microwave annealing of implanted ions in silicon. There are several typos in the figure captions and labels, and the authors would like to correct them. The text is correct, and the conclusion of [1] is not impacted by these revisions.

AB - The above article [1] presented data on microwave annealing of implanted ions in silicon. There are several typos in the figure captions and labels, and the authors would like to correct them. The text is correct, and the conclusion of [1] is not impacted by these revisions.

UR - http://www.scopus.com/inward/record.url?scp=85163589296&partnerID=8YFLogxK

U2 - 10.1109/TED.2023.3272843

DO - 10.1109/TED.2023.3272843

M3 - Comment/debate

AN - SCOPUS:85163589296

SN - 0018-9383

VL - 70

SP - 3983

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

Erratum: Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898)

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