Original language | English |
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Article number | 119801 |
Journal | Semiconductor Science and Technology |
Volume | 25 |
Issue number | 11 |
DOIs |
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State | Published - Nov 2010 |
Erratum: Linearly graded doping drift region: A novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances (Semiconductor Science and Technology (2002) 17 (721))
Jin He*, Xuemei Xi, Mansun Chan, Chen-Ming Hu, Yingxue Li, Zhang Xing, Ru Huang
*Corresponding author for this work
Research output: Contribution to journal › Comment/debate