Erratum: Linearly graded doping drift region: A novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances (Semiconductor Science and Technology (2002) 17 (721))

Jin He*, Xuemei Xi, Mansun Chan, Chen-Ming Hu, Yingxue Li, Zhang Xing, Ru Huang

*Corresponding author for this work

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number119801
JournalSemiconductor Science and Technology
Volume25
Issue number11
DOIs
StatePublished - Nov 2010

Cite this