Erratum: Fabricating a n+-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal(Applied Physics Letters (2015) 107(113503))

C. C. Hsu; C. H. Chou; S. Y. Wang; W. C. Chi; C. H. Chien; G. L. Luo

doi:10.1063/1.4937124

Erratum: Fabricating a n⁺-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal(Applied Physics Letters (2015) 107(113503))

C. C. Hsu, C. H. Chou, S. Y. Wang, W. C. Chi, C. H. Chien, G. L. Luo

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	239901
Journal	Applied Physics Letters
Volume	107
Issue number	23
DOIs	https://doi.org/10.1063/1.4937124
State	Published - 7 Dec 2015

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10.1063/1.4937124

Cite this

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AU - Chien, C. H.

AU - Luo, G. L.

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Erratum: Fabricating a n+-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal(Applied Physics Letters (2015) 107(113503))

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Erratum: Fabricating a n⁺-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal(Applied Physics Letters (2015) 107(113503))