Erratum: Direct patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (Electrochemical and Solid-State Letters (2003) 6 (G69))

T. C. Chang*, T. M. Tsai, Po-Tsun Liu, Y. S. Mor, C. W. Chen, Jeng-Tzong Sheu, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalComment/debate

Fingerprint

Dive into the research topics of 'Erratum: Direct patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (Electrochemical and Solid-State Letters (2003) 6 (G69))'. Together they form a unique fingerprint.