Original language | English |
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Pages (from-to) | L3 |
Number of pages | 1 |
Journal | Electrochemical and Solid-State Letters |
Volume | 6 |
Issue number | 7 |
DOIs |
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State | Published - 1 Jul 2003 |
Erratum: Direct patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (Electrochemical and Solid-State Letters (2003) 6 (G69))
T. C. Chang*, T. M. Tsai, Po-Tsun Liu, Y. S. Mor, C. W. Chen, Jeng-Tzong Sheu, Tseung-Yuen Tseng
*Corresponding author for this work
Research output: Contribution to journal › Comment/debate