Erratum: "Device linearity comparison of uniformly doped and α-doped In
                        0.52
                        Al
                        0.48
                        As/In
                        0.6
                         Ga
                        0.4
                        As metamorphic HEMTs" (IEEE Electron Device Letters)

Y. C. Lin; Edward Yi Chang; H. Yamaguchi; H. Hirayama; X. Y. Chang; C. Y. Chang

doi:10.1109/LED.2006.884081

Erratum: "Device linearity comparison of uniformly doped and α-doped In _0.52 Al _0.48 As/In _0.6 Ga _0.4 As metamorphic HEMTs" (IEEE Electron Device Letters)

Y. C. Lin^*, Edward Yi Chang, H. Yamaguchi, H. Hirayama, X. Y. Chang, C. Y. Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Comment/debate

Original language	English
Number of pages	1
Journal	IEEE Electron Device Letters
Volume	27
Issue number	10
DOIs	https://doi.org/10.1109/LED.2006.884081
State	Published - 1 Dec 2006

Access to Document

10.1109/LED.2006.884081

Cite this

Lin, Y. C., Chang, E. Y., Yamaguchi, H., Hirayama, H., Chang, X. Y., & Chang, C. Y. (2006). Erratum: "Device linearity comparison of uniformly doped and α-doped In _0.52 Al _0.48 As/In _0.6 Ga _0.4 As metamorphic HEMTs" (IEEE Electron Device Letters). IEEE Electron Device Letters, 27(10). https://doi.org/10.1109/LED.2006.884081

Lin, Y. C. ; Chang, Edward Yi ; Yamaguchi, H. et al. / Erratum : "Device linearity comparison of uniformly doped and α-doped In _0.52 Al _0.48 As/In _0.6 Ga _0.4 As metamorphic HEMTs" (IEEE Electron Device Letters). In: IEEE Electron Device Letters. 2006 ; Vol. 27, No. 10.

@article{c44b3e5f89404fea86db7ed24d44a8c1,

title = "Erratum: {"}Device linearity comparison of uniformly doped and α-doped In 0.52 Al 0.48 As/In 0.6 Ga 0.4 As metamorphic HEMTs{"} (IEEE Electron Device Letters)",

author = "Lin, {Y. C.} and Chang, {Edward Yi} and H. Yamaguchi and H. Hirayama and Chang, {X. Y.} and Chang, {C. Y.}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/LED.2006.884081",

language = "English",

volume = "27",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

Lin, YC, Chang, EY, Yamaguchi, H, Hirayama, H, Chang, XY & Chang, CY 2006, 'Erratum: "Device linearity comparison of uniformly doped and α-doped In _0.52 Al _0.48 As/In _0.6 Ga _0.4 As metamorphic HEMTs" (IEEE Electron Device Letters)', IEEE Electron Device Letters, vol. 27, no. 10. https://doi.org/10.1109/LED.2006.884081

Erratum: "Device linearity comparison of uniformly doped and α-doped In _0.52 Al _0.48 As/In _0.6 Ga _0.4 As metamorphic HEMTs" (IEEE Electron Device Letters). / Lin, Y. C.; Chang, Edward Yi; Yamaguchi, H. et al.
In: IEEE Electron Device Letters, Vol. 27, No. 10, 01.12.2006.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - "Device linearity comparison of uniformly doped and α-doped In 0.52 Al 0.48 As/In 0.6 Ga 0.4 As metamorphic HEMTs" (IEEE Electron Device Letters)

AU - Lin, Y. C.

AU - Chang, Edward Yi

AU - Yamaguchi, H.

AU - Hirayama, H.

AU - Chang, X. Y.

AU - Chang, C. Y.

PY - 2006/12/1

Y1 - 2006/12/1

UR - http://www.scopus.com/inward/record.url?scp=64249085025&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.884081

DO - 10.1109/LED.2006.884081

M3 - Comment/debate

AN - SCOPUS:64249085025

SN - 0741-3106

VL - 27

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

Lin YC, Chang EY, Yamaguchi H, Hirayama H, Chang XY, Chang CY. Erratum: "Device linearity comparison of uniformly doped and α-doped In _0.52 Al _0.48 As/In _0.6 Ga _0.4 As metamorphic HEMTs" (IEEE Electron Device Letters). IEEE Electron Device Letters. 2006 Dec 1;27(10). doi: 10.1109/LED.2006.884081

Erratum: "Device linearity comparison of uniformly doped and α-doped In 0.52 Al 0.48 As/In 0.6 Ga 0.4 As metamorphic HEMTs" (IEEE Electron Device Letters)

Access to Document

Other files and links

Cite this

Erratum: "Device linearity comparison of uniformly doped and α-doped In _0.52 Al _0.48 As/In _0.6 Ga _0.4 As metamorphic HEMTs" (IEEE Electron Device Letters)