EPITAXIAL GROWTH OF NEAR NOBLE SILICIDES ON (111)Si BY RAPID THERMAL ANNEALING.

Huang-Chung Cheng*, I. C. Wu, L. J. Chen

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations

    Abstract

    The epitaxial growth of near noble silicides, including CoSi//2, NiSi//2, FeSi//2, Pd//2Si, and PtSi on (111)Si, by rapid thermal annealing was studied by transmission electron microscopy. Single-crystalline CoSi//2 was formed on (111)Si in the solid phase epitaxy regime by a non-ultra-high vacuum method. The effect on gas ambient was found to be of critical importance on the growth of single-crystal CoSi//2 on (111)Si. The best NiSi//2, FeSi//2, Pd//2Si, and PtSi epitaxy grown on (111)Si by rapid thermal annealing were found to be of comparable quality to those grown by conventional furnace annealing.

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposia Proceedings
    EditorsMichael O. Thompson, S.Thomas Picraux, James S. Williams
    PublisherMaterials Research Soc
    Pages653-657
    Number of pages5
    ISBN (Print)0931837405
    DOIs
    StatePublished - 1 Dec 1987
    EventBeam-Solid Interact and Transient Processes - Boston, MA, USA
    Duration: 1 Dec 19864 Dec 1986

    Publication series

    NameMaterials Research Society Symposia Proceedings
    Volume74
    ISSN (Print)0272-9172

    Conference

    ConferenceBeam-Solid Interact and Transient Processes
    CityBoston, MA, USA
    Period1/12/864/12/86

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