EPITAXIAL GROWTH OF NEAR NOBLE SILICIDES ON (111)Si BY RAPID THERMAL ANNEALING.

Huang-Chung Cheng; I. C. Wu; L. J. Chen

doi:10.1557/PROC-74-653

EPITAXIAL GROWTH OF NEAR NOBLE SILICIDES ON (111)Si BY RAPID THERMAL ANNEALING.

Huang-Chung Cheng^*, I. C. Wu, L. J. Chen

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The epitaxial growth of near noble silicides, including CoSi//2, NiSi//2, FeSi//2, Pd//2Si, and PtSi on (111)Si, by rapid thermal annealing was studied by transmission electron microscopy. Single-crystalline CoSi//2 was formed on (111)Si in the solid phase epitaxy regime by a non-ultra-high vacuum method. The effect on gas ambient was found to be of critical importance on the growth of single-crystal CoSi//2 on (111)Si. The best NiSi//2, FeSi//2, Pd//2Si, and PtSi epitaxy grown on (111)Si by rapid thermal annealing were found to be of comparable quality to those grown by conventional furnace annealing.

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Editors	Michael O. Thompson, S.Thomas Picraux, James S. Williams
Publisher	Materials Research Soc
Pages	653-657
Number of pages	5
ISBN (Print)	0931837405
DOIs	https://doi.org/10.1557/PROC-74-653
State	Published - 1 Dec 1987
Event	Beam-Solid Interact and Transient Processes - Boston, MA, USA Duration: 1 Dec 1986 → 4 Dec 1986

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	74
ISSN (Print)	0272-9172

Conference

Conference	Beam-Solid Interact and Transient Processes
City	Boston, MA, USA
Period	1/12/86 → 4/12/86

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title = "EPITAXIAL GROWTH OF NEAR NOBLE SILICIDES ON (111)Si BY RAPID THERMAL ANNEALING.",

abstract = "The epitaxial growth of near noble silicides, including CoSi//2, NiSi//2, FeSi//2, Pd//2Si, and PtSi on (111)Si, by rapid thermal annealing was studied by transmission electron microscopy. Single-crystalline CoSi//2 was formed on (111)Si in the solid phase epitaxy regime by a non-ultra-high vacuum method. The effect on gas ambient was found to be of critical importance on the growth of single-crystal CoSi//2 on (111)Si. The best NiSi//2, FeSi//2, Pd//2Si, and PtSi epitaxy grown on (111)Si by rapid thermal annealing were found to be of comparable quality to those grown by conventional furnace annealing.",

author = "Huang-Chung Cheng and Wu, {I. C.} and Chen, {L. J.}",

year = "1987",

month = dec,

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doi = "10.1557/PROC-74-653",

language = "English",

isbn = "0931837405",

series = "Materials Research Society Symposia Proceedings",

publisher = "Materials Research Soc",

pages = "653--657",

editor = "Thompson, {Michael O.} and S.Thomas Picraux and Williams, {James S.}",

booktitle = "Materials Research Society Symposia Proceedings",

note = "null ; Conference date: 01-12-1986 Through 04-12-1986",

}

Cheng, H-C, Wu, IC & Chen, LJ 1987, EPITAXIAL GROWTH OF NEAR NOBLE SILICIDES ON (111)Si BY RAPID THERMAL ANNEALING. in MO Thompson, ST Picraux & JS Williams (eds), Materials Research Society Symposia Proceedings. Materials Research Society Symposia Proceedings, vol. 74, Materials Research Soc, pp. 653-657, Beam-Solid Interact and Transient Processes, Boston, MA, USA, 1/12/86. https://doi.org/10.1557/PROC-74-653

EPITAXIAL GROWTH OF NEAR NOBLE SILICIDES ON (111)Si BY RAPID THERMAL ANNEALING. / Cheng, Huang-Chung; Wu, I. C.; Chen, L. J.

Materials Research Society Symposia Proceedings. ed. / Michael O. Thompson; S.Thomas Picraux; James S. Williams. Materials Research Soc, 1987. p. 653-657 (Materials Research Society Symposia Proceedings; Vol. 74).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - EPITAXIAL GROWTH OF NEAR NOBLE SILICIDES ON (111)Si BY RAPID THERMAL ANNEALING.

AU - Cheng, Huang-Chung

AU - Wu, I. C.

AU - Chen, L. J.

PY - 1987/12/1

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N2 - The epitaxial growth of near noble silicides, including CoSi//2, NiSi//2, FeSi//2, Pd//2Si, and PtSi on (111)Si, by rapid thermal annealing was studied by transmission electron microscopy. Single-crystalline CoSi//2 was formed on (111)Si in the solid phase epitaxy regime by a non-ultra-high vacuum method. The effect on gas ambient was found to be of critical importance on the growth of single-crystal CoSi//2 on (111)Si. The best NiSi//2, FeSi//2, Pd//2Si, and PtSi epitaxy grown on (111)Si by rapid thermal annealing were found to be of comparable quality to those grown by conventional furnace annealing.

AB - The epitaxial growth of near noble silicides, including CoSi//2, NiSi//2, FeSi//2, Pd//2Si, and PtSi on (111)Si, by rapid thermal annealing was studied by transmission electron microscopy. Single-crystalline CoSi//2 was formed on (111)Si in the solid phase epitaxy regime by a non-ultra-high vacuum method. The effect on gas ambient was found to be of critical importance on the growth of single-crystal CoSi//2 on (111)Si. The best NiSi//2, FeSi//2, Pd//2Si, and PtSi epitaxy grown on (111)Si by rapid thermal annealing were found to be of comparable quality to those grown by conventional furnace annealing.

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BT - Materials Research Society Symposia Proceedings

A2 - Thompson, Michael O.

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A2 - Williams, James S.

PB - Materials Research Soc

Y2 - 1 December 1986 through 4 December 1986

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EPITAXIAL GROWTH OF NEAR NOBLE SILICIDES ON (111)Si BY RAPID THERMAL ANNEALING.

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