Epitaxial growth of AlAsXSb1-X by MOCVD

Wei-Kuo Chen; Jehn Ou

doi:10.1109/EDMS.1994.771313

Epitaxial growth of AlAs_XSb_1-X by MOCVD

Wei-Kuo Chen, Jehn Ou

Department of Electrophysics

Research output: Contribution to conference › Paper › peer-review

Abstract

The deposition of AlAs_XSb_1-X films is studied systematically using an metalorganic chemical vapor deposition growth technique. It is found that the growth of AlAsSb films requires a low V/III ratio to enhance the incorporation of antimony into the solid. The composition of the alloy also depends strongly on the growth temperature. Experimental data shows that films grown at higher temperatures yield much higher AlSb contents in the AlAs_xSb_1-x alloys. This is contrary to the results reported for GaAsSb films. In our study, we are able to grow metastable AlAsxSbi-x epitaxial films throughout the entire range of the solid composition for temperatures above 550 °C.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771313
State	Published - 12 Jul 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 12 Jul 1994 → 15 Jul 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	12/07/94 → 15/07/94

Access to Document

10.1109/EDMS.1994.771313

Cite this

@conference{5f58f10bfc06483084db10985b9940c2,

title = "Epitaxial growth of AlAsXSb1-X by MOCVD",

abstract = "The deposition of AlAsXSb1-X films is studied systematically using an metalorganic chemical vapor deposition growth technique. It is found that the growth of AlAsSb films requires a low V/III ratio to enhance the incorporation of antimony into the solid. The composition of the alloy also depends strongly on the growth temperature. Experimental data shows that films grown at higher temperatures yield much higher AlSb contents in the AlAsxSb1-x alloys. This is contrary to the results reported for GaAsSb films. In our study, we are able to grow metastable AlAsxSbi-x epitaxial films throughout the entire range of the solid composition for temperatures above 550 °C.",

author = "Wei-Kuo Chen and Jehn Ou",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

month = jul,

day = "12",

doi = "10.1109/EDMS.1994.771313",

language = "English",

}

TY - CONF

T1 - Epitaxial growth of AlAsXSb1-X by MOCVD

AU - Chen, Wei-Kuo

AU - Ou, Jehn

PY - 1994/7/12

Y1 - 1994/7/12

N2 - The deposition of AlAsXSb1-X films is studied systematically using an metalorganic chemical vapor deposition growth technique. It is found that the growth of AlAsSb films requires a low V/III ratio to enhance the incorporation of antimony into the solid. The composition of the alloy also depends strongly on the growth temperature. Experimental data shows that films grown at higher temperatures yield much higher AlSb contents in the AlAsxSb1-x alloys. This is contrary to the results reported for GaAsSb films. In our study, we are able to grow metastable AlAsxSbi-x epitaxial films throughout the entire range of the solid composition for temperatures above 550 °C.

AB - The deposition of AlAsXSb1-X films is studied systematically using an metalorganic chemical vapor deposition growth technique. It is found that the growth of AlAsSb films requires a low V/III ratio to enhance the incorporation of antimony into the solid. The composition of the alloy also depends strongly on the growth temperature. Experimental data shows that films grown at higher temperatures yield much higher AlSb contents in the AlAsxSb1-x alloys. This is contrary to the results reported for GaAsSb films. In our study, we are able to grow metastable AlAsxSbi-x epitaxial films throughout the entire range of the solid composition for temperatures above 550 °C.

UR - http://www.scopus.com/inward/record.url?scp=85063573133&partnerID=8YFLogxK

U2 - 10.1109/EDMS.1994.771313

DO - 10.1109/EDMS.1994.771313

M3 - Paper

AN - SCOPUS:85063573133

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

Epitaxial growth of AlAs_XSb_1-X by MOCVD

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this