Epitaxial germanium on soi substrate and its application of fabricating high i on IOFF ratio Ge FinFETs

Cheng Ting Chung, Che Wei Chen, Jyun Chih Lin, Che Chen Wu, Chao-Hsin Chien, Guang Li Luo, Chi Chung Kei, Chien Nan Hsiao

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11 Scopus citations


Integrating germanium (Ge) thin film on silicon-on-insulator (SOI) substrate and fabricating Ge fin field-effect transistors (FinFETs) are demonstrated in this paper. Directly grown Ge film on a high-resistivity thin SOI substrate provides a good platform for fabricating advanced Ge devices. The SOI structure could effectively suppress junction leakage; therefore, high I ONIOFF ratio (∼5× 105, at VD=0.1V) of the drain current is achieved. Tri-gate structure provides better short-channel control abilities for the Ge FinFETs, and the drain-induced barrier lowering and threshold voltage (VTH) shift can be maintained at the level of ∼ 110 mVV and ∼ 0.1 V, respectively, for Ge n-channel FinFET with Lchannel=120nm and WFin=40nm. Multifin Ge FinFET with Lchannel=170nm and WFin=50 nm is also illustrated. Both N-and P-FinFETs possess high IONIOFF ratio over 10 4. Besides, the subthreshold swing could be reduced around 25% after forming gas annealing.

Original languageEnglish
Article number6515139
Pages (from-to)1878-1883
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - 29 May 2013


  • Epitaxial Ge on silicon on-insulator (SOI) substrates
  • Ge CMOS
  • fin field-effect transistors (FinFETs)
  • forming gas annealing
  • germanium


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