@inproceedings{d55e34cafdd740b7ae6b1ddcd7f3c75f,
title = "EOS Failure in Low-Voltage Core Circuits during Latch-up Test at I/O Pins",
abstract = "The occurrence of electrical overstress (EOS) failure in low-voltage core circuits resulting from latch-up test at the I/O pins was investigated, where a specific commercial IC product equipped with on-chip low-dropout regulator (LDO). Through failure analysis experiments, the root cause of EOS failures is identified to the abnormal LDO output voltage during latch-up test. In this work, a modified design featuring a deep n-well (DNW) beneath the NMOS region is proposed to mitigate EOS issue by enhancing electron absorption. Additionally, compensation network configurations are explored to explain the abnormal LDO operation. The experimental results from test chip have validated the effectiveness of the proposed modifications, emphasizing the importance of proactive measures in mitigating EOS failures.",
keywords = "deep n-well, electrical overstress (EOS), latch-up test, low-dropout regulator",
author = "Hsu, {Chen Wei} and Ker, {Ming Dou} and Chung, {Ping Lin} and Cheng, {Chin Tung} and Chen, {Chih Ping}",
note = "Publisher Copyright: {\textcopyright} 2024 ASM International{\textregistered}; 50th International Symposium for Testing and Failure Analysis Conference, ISTFA 2024 ; Conference date: 28-10-2024 Through 01-11-2024",
year = "2024",
doi = "10.31399/asm.cp.istfa2024p0042",
language = "English",
series = "Conference Proceedings from the International Symposium for Testing and Failure Analysis",
publisher = "ASM International",
pages = "42--46",
booktitle = "ISTFA 2024",
address = "美國",
}