EOS Endurance Power Circuits without Depletion Mode Devices

Shao Chang Huang, Jian Hsing Lee, Ching Ho Li, Sue Yi Chen, Chih Hsuan Lin, Chun Chih Chen, Li Fan Chen, Gong Kai Lin, Chien Wei Wang, Kai Chieh Hsu, Szu Chi Chen, Shang Chuan Pai, Fu Wei Pai, Yin Wei Peng, Chih Cherng Liao, Ke Horng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Electrical Overstress (EOS) avoiding power integrated circuits (ICs) are often designed with depletion mode NMOSFET. In some applications, there can be no depletion mode NMOSFETs. From device normal operations and EOS analyses, new circuits without depletion mode devices are successfully proposed for approaching device typical operations and EOS endurances.

Original languageEnglish
Title of host publicationProceedings - 2022 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages79-80
Number of pages2
ISBN (Electronic)9781665470506
DOIs
StatePublished - 2022
Event2022 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2022 - Taipei, Taiwan
Duration: 6 Jul 20228 Jul 2022

Publication series

NameProceedings - 2022 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2022

Conference

Conference2022 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2022
Country/TerritoryTaiwan
CityTaipei
Period6/07/228/07/22

Fingerprint

Dive into the research topics of 'EOS Endurance Power Circuits without Depletion Mode Devices'. Together they form a unique fingerprint.

Cite this