Enhancing the thermal stability of GaSb Schottky-Barrier MOSFET with Pt Source/Drain

Ming Li Tsai; Yun Pin Chang; Chao-Hsin Chien

doi:10.1109/LED.2018.2838118

Enhancing the thermal stability of GaSb Schottky-Barrier MOSFET with Pt Source/Drain

Ming Li Tsai^*, Yun Pin Chang, Chao-Hsin Chien

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this study, a Pt/GaSb Schottky diode with impressive rectifying behavior is used for the first time in the fabrication of a GaSb p-channel Schottky-barrier metal-oxide-semiconductor field-effect transistor (MOSFET). A gate-last integration scheme was employed to fabricate the MOSFET. Compared with a MOSFET with a Ni-alloy source and drain (S/D), the MOSFET with a Pt-alloy S/D can endure higher thermal stress during atomic layer deposition at 250 °C for 1 h without significant junction degradation. This high endurance to thermal stress is because Pt alloy has a lower reactivity to GaSb and a higher crystallization temperature. As a result, a record high ON/OFF ratio of 3× 10⁴ is reported for the GaSb Schottky-barrier MOSFET; an effective hole mobility of approximately 82 cm²V^-1s^-1 is achieved.

Original language	English
Pages (from-to)	939-942
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	39
Issue number	7
DOIs	https://doi.org/10.1109/LED.2018.2838118
State	Published - Jul 2018

Keywords

Gallium antimonide
Schottky barriers
metal source/drain
platinum alloys

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@article{e4c51f497edf46ae8198ef2c787c166d,

title = "Enhancing the thermal stability of GaSb Schottky-Barrier MOSFET with Pt Source/Drain",

abstract = "In this study, a Pt/GaSb Schottky diode with impressive rectifying behavior is used for the first time in the fabrication of a GaSb p-channel Schottky-barrier metal-oxide-semiconductor field-effect transistor (MOSFET). A gate-last integration scheme was employed to fabricate the MOSFET. Compared with a MOSFET with a Ni-alloy source and drain (S/D), the MOSFET with a Pt-alloy S/D can endure higher thermal stress during atomic layer deposition at 250 °C for 1 h without significant junction degradation. This high endurance to thermal stress is because Pt alloy has a lower reactivity to GaSb and a higher crystallization temperature. As a result, a record high ON/OFF ratio of 3× 104 is reported for the GaSb Schottky-barrier MOSFET; an effective hole mobility of approximately 82 cm2V-1s-1 is achieved.",

keywords = "Gallium antimonide, Schottky barriers, metal source/drain, platinum alloys",

author = "Tsai, {Ming Li} and Chang, {Yun Pin} and Chao-Hsin Chien",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2018",

month = jul,

doi = "10.1109/LED.2018.2838118",

language = "English",

volume = "39",

pages = "939--942",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Enhancing the thermal stability of GaSb Schottky-Barrier MOSFET with Pt Source/Drain

AU - Tsai, Ming Li

AU - Chang, Yun Pin

AU - Chien, Chao-Hsin

PY - 2018/7

Y1 - 2018/7

N2 - In this study, a Pt/GaSb Schottky diode with impressive rectifying behavior is used for the first time in the fabrication of a GaSb p-channel Schottky-barrier metal-oxide-semiconductor field-effect transistor (MOSFET). A gate-last integration scheme was employed to fabricate the MOSFET. Compared with a MOSFET with a Ni-alloy source and drain (S/D), the MOSFET with a Pt-alloy S/D can endure higher thermal stress during atomic layer deposition at 250 °C for 1 h without significant junction degradation. This high endurance to thermal stress is because Pt alloy has a lower reactivity to GaSb and a higher crystallization temperature. As a result, a record high ON/OFF ratio of 3× 104 is reported for the GaSb Schottky-barrier MOSFET; an effective hole mobility of approximately 82 cm2V-1s-1 is achieved.

AB - In this study, a Pt/GaSb Schottky diode with impressive rectifying behavior is used for the first time in the fabrication of a GaSb p-channel Schottky-barrier metal-oxide-semiconductor field-effect transistor (MOSFET). A gate-last integration scheme was employed to fabricate the MOSFET. Compared with a MOSFET with a Ni-alloy source and drain (S/D), the MOSFET with a Pt-alloy S/D can endure higher thermal stress during atomic layer deposition at 250 °C for 1 h without significant junction degradation. This high endurance to thermal stress is because Pt alloy has a lower reactivity to GaSb and a higher crystallization temperature. As a result, a record high ON/OFF ratio of 3× 104 is reported for the GaSb Schottky-barrier MOSFET; an effective hole mobility of approximately 82 cm2V-1s-1 is achieved.

KW - Gallium antimonide

KW - Schottky barriers

KW - metal source/drain

KW - platinum alloys

UR - http://www.scopus.com/inward/record.url?scp=85047211830&partnerID=8YFLogxK

U2 - 10.1109/LED.2018.2838118

DO - 10.1109/LED.2018.2838118

M3 - Article

AN - SCOPUS:85047211830

SN - 0741-3106

VL - 39

SP - 939

EP - 942

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 7

ER -

Enhancing the thermal stability of GaSb Schottky-Barrier MOSFET with Pt Source/Drain

Abstract

Keywords

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