Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage

T. C. Chang, Y. S. Mor, Po-Tsun Liu, T. M. Tsai, C. W. Chen, Y. J. Mei, S. M. Sze

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


The interaction between low-k hydrogen silsesquioxane (HSQ) film and wet stripper was investigated. The wet stripper has been commonly used to remove photoresister in IC integration processing. However, the high content of alkalinity in the stripper solution often leads to the hydrolysis of HSQ film, forming dangling bonds in the HSQ. The dangling bonds in the HSQ film can easily react with hydroxide ion (OH-) in wet stripper solution and form Si-OH bonds. The resultant HSQ film will tend to uptake water and consequently increase both the leakage current and dielectric constant. In this study, H2-plasma pre-treatment was applied to the HSQ film. The hydrogen plasma treatment passivates the HSQ surface and prevent HSQ from water uptake during photoresist stripping. Therefore, dielectric degradation can be avoided with the H2-plasma pre-treatment.

Original languageEnglish
Pages (from-to)523-526
Number of pages4
JournalThin Solid Films
Issue number399
StatePublished - Nov 2001


  • HSQ
  • Hydrogen plasma
  • Low k
  • PR removal
  • Wet stripper


Dive into the research topics of 'Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage'. Together they form a unique fingerprint.

Cite this