Enhancing the Performance of E-mode AlGaN/GaN HEMTs with Recessed Gates through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

Yi Ho Chen, Daisuke Ohori, Muhammad Aslam, Yao Jen Lee, Yi-Ming Li, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

Abstract

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalIEEE Open Journal of Nanotechnology
DOIs
StateAccepted/In press - 2023

Keywords

  • AlGaN/GaN HEMTs
  • Aluminum gallium nitride
  • Etching
  • HEMTs
  • Logic gates
  • MODFETs
  • neutral beam etching
  • post-metallization annealing
  • recess gate
  • Surface treatment
  • Wide band gap semiconductors

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