TY - JOUR
T1 - Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H2 plasma treatment
AU - Liu, Po-Tsun
AU - Chang, Ting Chang
AU - Mor, Yi Shian
AU - Sze, Simon M.
PY - 1999/6
Y1 - 1999/6
N2 - The organic silsesquioxane, methylsilsesquioxane (MSQ), has a low dielectric constant because of its low film density compared to thermal oxide. However, the quality of the MSQ film is degraded by the damage caused by oxygen plasma and hygroscopic behavior during photoresist stripping. In this work, we have studied the ability of H2 plasma treatment to improve the quality of MSQ. The leakage current of MSQ decreases as the H2 plasma treatment time is increased. The dielectric constant of treated samples remains constant (approximately 2.7). In addition, the thermal stability of MSQ film is significantly promoted. The H2 plasma treatment can provide additional hydrogen to passivate the inner structure of porous MSQ film, and reduce the probability of moisture uptake. Therefore, H2 plasma treatment can improve the quality of low-k MSQ film and reduce the issue of photoresist stripping in the integrated process.
AB - The organic silsesquioxane, methylsilsesquioxane (MSQ), has a low dielectric constant because of its low film density compared to thermal oxide. However, the quality of the MSQ film is degraded by the damage caused by oxygen plasma and hygroscopic behavior during photoresist stripping. In this work, we have studied the ability of H2 plasma treatment to improve the quality of MSQ. The leakage current of MSQ decreases as the H2 plasma treatment time is increased. The dielectric constant of treated samples remains constant (approximately 2.7). In addition, the thermal stability of MSQ film is significantly promoted. The H2 plasma treatment can provide additional hydrogen to passivate the inner structure of porous MSQ film, and reduce the probability of moisture uptake. Therefore, H2 plasma treatment can improve the quality of low-k MSQ film and reduce the issue of photoresist stripping in the integrated process.
UR - http://www.scopus.com/inward/record.url?scp=0032636373&partnerID=8YFLogxK
U2 - 10.1143/JJAP.38.3482
DO - 10.1143/JJAP.38.3482
M3 - Article
AN - SCOPUS:0032636373
SN - 0021-4922
VL - 38
SP - 3482
EP - 3486
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 6 A
ER -