Enhancement performance of GaN-based light-emitting diodes by modified patterned sapphire surface

B. W. Lin; W. C. Hsu; Yew-Chuhg Wu

doi:10.1149/1.3485608

Enhancement performance of GaN-based light-emitting diodes by modified patterned sapphire surface

B. W. Lin^*, W. C. Hsu, Yew-Chuhg Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The PSSs were fabricated by wet etching. Compared with the platform-PSS, the modified-PSS was still capped with a layer on the top platform after wet etching. The output power of the platform-PSS LED and modified-PSS are 27.3 mW and 29 mW, respectively, at an injection current of 20 mA. The output power of the modified-PSS LED is enhanced 6% compared with the platform-PSS. The results reveal that both electrical properties and optical properties of modified-PSS LED were improved.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
Pages	67-69
Number of pages	3
Edition	13
DOIs	https://doi.org/10.1149/1.3485608
State	Published - 1 Dec 2010
Event	State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting - Las Vegas, NV, United States Duration: 10 Oct 2010 → 15 Oct 2010

Publication series

Name	ECS Transactions
Number	13
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting
Country/Territory	United States
City	Las Vegas, NV
Period	10/10/10 → 15/10/10

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10.1149/1.3485608

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@inproceedings{277bc59d0b8a4226b1887381758bbe5a,

title = "Enhancement performance of GaN-based light-emitting diodes by modified patterned sapphire surface",

abstract = "The PSSs were fabricated by wet etching. Compared with the platform-PSS, the modified-PSS was still capped with a layer on the top platform after wet etching. The output power of the platform-PSS LED and modified-PSS are 27.3 mW and 29 mW, respectively, at an injection current of 20 mA. The output power of the modified-PSS LED is enhanced 6% compared with the platform-PSS. The results reveal that both electrical properties and optical properties of modified-PSS LED were improved.",

author = "Lin, {B. W.} and Hsu, {W. C.} and Yew-Chuhg Wu",

year = "2010",

month = dec,

day = "1",

doi = "10.1149/1.3485608",

language = "English",

isbn = "9781607681823",

series = "ECS Transactions",

number = "13",

pages = "67--69",

booktitle = "State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52",

edition = "13",

note = "State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting ; Conference date: 10-10-2010 Through 15-10-2010",

}

Lin, BW, Hsu, WC & Wu, Y-C 2010, Enhancement performance of GaN-based light-emitting diodes by modified patterned sapphire surface. in State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52. 13 edn, ECS Transactions, no. 13, vol. 33, pp. 67-69, State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3485608

Enhancement performance of GaN-based light-emitting diodes by modified patterned sapphire surface. / Lin, B. W.; Hsu, W. C.; Wu, Yew-Chuhg.
State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52. 13. ed. 2010. p. 67-69 (ECS Transactions; Vol. 33, No. 13).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhancement performance of GaN-based light-emitting diodes by modified patterned sapphire surface

AU - Lin, B. W.

AU - Hsu, W. C.

AU - Wu, Yew-Chuhg

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The PSSs were fabricated by wet etching. Compared with the platform-PSS, the modified-PSS was still capped with a layer on the top platform after wet etching. The output power of the platform-PSS LED and modified-PSS are 27.3 mW and 29 mW, respectively, at an injection current of 20 mA. The output power of the modified-PSS LED is enhanced 6% compared with the platform-PSS. The results reveal that both electrical properties and optical properties of modified-PSS LED were improved.

AB - The PSSs were fabricated by wet etching. Compared with the platform-PSS, the modified-PSS was still capped with a layer on the top platform after wet etching. The output power of the platform-PSS LED and modified-PSS are 27.3 mW and 29 mW, respectively, at an injection current of 20 mA. The output power of the modified-PSS LED is enhanced 6% compared with the platform-PSS. The results reveal that both electrical properties and optical properties of modified-PSS LED were improved.

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U2 - 10.1149/1.3485608

DO - 10.1149/1.3485608

M3 - Conference contribution

AN - SCOPUS:84863136983

SN - 9781607681823

T3 - ECS Transactions

SP - 67

EP - 69

BT - State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52

T2 - State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting

Y2 - 10 October 2010 through 15 October 2010

ER -

Enhancement performance of GaN-based light-emitting diodes by modified patterned sapphire surface

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