Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

Tan Fu Lei; Jiann Heng Chen; Ming Fang Wang; Tien-Sheng Chao

doi:10.1109/55.761025

Enhancement of integrity of polysilicon oxide by using a combination of N₂O nitridation and CMP process

Tan Fu Lei^*, Jiann Heng Chen, Ming Fang Wang, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N₂O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Q_bd (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.

Original language	English
Pages (from-to)	235-237
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	20
Issue number	5
DOIs	https://doi.org/10.1109/55.761025
State	Published - 1999

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10.1109/55.761025

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@article{33bf99a8f27b48b59dc6e1757417d6c5,

title = "Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process",

abstract = "This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Qbd (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.",

author = "Lei, {Tan Fu} and Chen, {Jiann Heng} and Wang, {Ming Fang} and Tien-Sheng Chao",

year = "1999",

doi = "10.1109/55.761025",

language = "English",

volume = "20",

pages = "235--237",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

AU - Lei, Tan Fu

AU - Chen, Jiann Heng

AU - Wang, Ming Fang

AU - Chao, Tien-Sheng

PY - 1999

Y1 - 1999

N2 - This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Qbd (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.

AB - This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Qbd (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide.

UR - http://www.scopus.com/inward/record.url?scp=0032631389&partnerID=8YFLogxK

U2 - 10.1109/55.761025

DO - 10.1109/55.761025

M3 - Article

AN - SCOPUS:0032631389

SN - 0741-3106

VL - 20

SP - 235

EP - 237

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 5

ER -

Enhancement of integrity of polysilicon oxide by using a combination of N₂O nitridation and CMP process

Abstract

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