P. K. Ko*, S. Tam, Chen-Ming Hu, S. S. Wong, C. G. Sodini

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

13 Scopus citations


Graded-gate-oxide(GGO)-MOSFETs with various degrees of gate-drain(source) overlap (and grading thickness of the gate oxide near the polysilicon-gate edge) have been investigated for hot-electron generation. Compared with a conventional MOSFET, the GGO-MOSFET exhibits higher substrate and gate currents when the gate voltage is raised above a critical value (Vgc). Vgc is found to be dependent on the drain voltage. It is also a smooth function of the degree of gate-drain(source) overlap, which can be controlled by the fabrication process. These experimental findings are supported by results obtained from the two-dimensional analysis of a similar device structure. Implications of the GGO phenomena on MOS technologies are discussed. Possible use of the GGO-MOSFET in EPROM is proposed.

Original languageEnglish
Pages (from-to)88-91
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 1984


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