Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode

Keyphrases

• Ferroelectric Insulator 100%
• Tin Electrodes 100%
• Hf0.5Zr0.5O2 66%
• Sub-5 Nm 33%
• Tensile Stress 33%
• Process Conditions 33%
• Complementary Metal Oxide Semiconductor 33%
• Semiconductor Devices 33%
• Sputtering Process 33%
• Remanent Polarization 33%
• Large Capacitance 33%
• Capacitance Value 33%
• Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) 33%
• Ferroelectric Characteristics 33%
• Nitrogen N 33%
• N Concentration 33%
• Compressive Characteristics 33%
• Electrode Engineering 33%
• Hf0.5Zr0.5O2 Films 33%

Material Science

• Ferroelectric Material 100%
• Ferroelectricity 100%
• Film 33%
• Capacitance 33%
• Ultimate Tensile Strength 33%
• Complementary Metal-Oxide-Semiconductor Device 33%
• Semiconductor Device 33%