Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure

Ting Chang Chang; Po-Tsun Liu; Ya Liang Yang; Jung Chih Hu; Simon M. Sze

doi:10.1143/JJAP.39.L82

Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure

Ting Chang Chang, Po-Tsun Liu, Ya Liang Yang, Jung Chih Hu, Simon M. Sze

Department of Photonics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A novel multi-stacked Ti/TiN structure was proposed to enhance the barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.

Original language	English
Pages (from-to)	L82-L85
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	39
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.39.L82
State	Published - Feb 2000

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title = "Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure",

abstract = "A novel multi-stacked Ti/TiN structure was proposed to enhance the barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.",

author = "Chang, {Ting Chang} and Po-Tsun Liu and Yang, {Ya Liang} and Hu, {Jung Chih} and Sze, {Simon M.}",

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T1 - Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Yang, Ya Liang

AU - Hu, Jung Chih

AU - Sze, Simon M.

PY - 2000/2

Y1 - 2000/2

N2 - A novel multi-stacked Ti/TiN structure was proposed to enhance the barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.

AB - A novel multi-stacked Ti/TiN structure was proposed to enhance the barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.

UR - http://www.scopus.com/inward/record.url?scp=0033877377&partnerID=8YFLogxK

U2 - 10.1143/JJAP.39.L82

DO - 10.1143/JJAP.39.L82

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AN - SCOPUS:0033877377

SN - 0021-4922

VL - 39

SP - L82-L85

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 2 A

ER -

Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure

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