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Enhanced Tunnel Field Effect Transistor

Bing-Yue Tsui (Inventor)

Institute of Electronics

Research output: Patent

Overview

Original language	English
Patent number	US 8,853,824 B1
State	Published - 7 Oct 2014

Cite this

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Tsui, B.-Y. (2014). Enhanced Tunnel Field Effect Transistor. (Patent No. US 8,853,824 B1).

Tsui, Bing-Yue (Inventor). / Enhanced Tunnel Field Effect Transistor. Patent No.: US 8,853,824 B1. Oct 07, 2014.

@misc{f36ed7454c444bd2955e201af61b7b4b,

title = "Enhanced Tunnel Field Effect Transistor",

author = "Bing-Yue Tsui",

year = "2014",

month = oct,

day = "7",

language = "English",

type = "Patent",

note = "US 8,853,824 B1",

}

Tsui, B-Y Oct. 07 2014, Enhanced Tunnel Field Effect Transistor, Patent No. US 8,853,824 B1.

Enhanced Tunnel Field Effect Transistor. / Tsui, Bing-Yue (Inventor).
Patent No.: US 8,853,824 B1. Oct 07, 2014.

Research output: Patent

TY - PAT

T1 - Enhanced Tunnel Field Effect Transistor

AU - Tsui, Bing-Yue

PY - 2014/10/7

Y1 - 2014/10/7

M3 - Patent

M1 - US 8,853,824 B1

ER -

Tsui BY, inventor. Enhanced Tunnel Field Effect Transistor. US 8,853,824 B1. 2014 Oct 7.

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