Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme

Sridhar Chandrasekaran; Firman Mangasa Simanjuntak; Debashis Panda; Tseung-Yuen Tseng

doi:10.1109/TED.2019.2941764

Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme

Sridhar Chandrasekaran, Firman Mangasa Simanjuntak, Debashis Panda, Tseung-Yuen Tseng^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

The synaptic plasticity of indium tin oxide (ITO)/ZnO/ITO highly transparent (more than 88%) analog switching resistive memory device is investigated. Highly stable analog switching behavior for more than 2500 cycles with a good memory window of approximately two orders makes it suitable for synapse application. The synaptic response is investigated by applying identical electrical pulses. The potentiation and depression of the device used the conventional identical single-pulse scheme to perform high nonlinearity (0.83) and decaying training epochs. However, the linearity and the training epochs are improved to 0.44 by implementing the identical double-pulse scheme. The proposed double-pulse scheme offers a broad dynamic range (200) having 320 conductance states. This invisible structure and double-pulse scheme can be highly suitable for the neuromorphic computing devices.

Original language	English
Article number	8851411
Pages (from-to)	4722-4726
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	11
DOIs	https://doi.org/10.1109/TED.2019.2941764
State	Published - Nov 2019

Keywords

Brain-inspired computing
neural networks
resistive synapse
synapse

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title = "Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme",

abstract = "The synaptic plasticity of indium tin oxide (ITO)/ZnO/ITO highly transparent (more than 88%) analog switching resistive memory device is investigated. Highly stable analog switching behavior for more than 2500 cycles with a good memory window of approximately two orders makes it suitable for synapse application. The synaptic response is investigated by applying identical electrical pulses. The potentiation and depression of the device used the conventional identical single-pulse scheme to perform high nonlinearity (0.83) and decaying training epochs. However, the linearity and the training epochs are improved to 0.44 by implementing the identical double-pulse scheme. The proposed double-pulse scheme offers a broad dynamic range (200) having 320 conductance states. This invisible structure and double-pulse scheme can be highly suitable for the neuromorphic computing devices.",

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author = "Sridhar Chandrasekaran and Simanjuntak, {Firman Mangasa} and Debashis Panda and Tseung-Yuen Tseng",

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Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme

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