Enhanced Synaptic Features of ZnO/TaOxBilayer Invisible Memristor for Brain-Inspired Computing

Dayanand Kumar; Lai Boon Keong; Nazek El-Atab; Tseung Yuen Tseng

doi:10.1109/LED.2022.3217983

Enhanced Synaptic Features of ZnO/TaO_xBilayer Invisible Memristor for Brain-Inspired Computing

Dayanand Kumar, Lai Boon Keong, Nazek El-Atab^*, Tseung Yuen Tseng^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this letter, we present a transparent bilayer ZnO/TaOx memristive synapse for brain-inspired computing. The device shows excellent AC endurance (109 cycles) and high-temperature retention (104 s) without any degradation at 100 °C. The device exhibits highly stable repetitive 5130 potentiation (P) and depression (D) epochs with 1.026 M pulses. The multilevel characteristics (MLC) of the device are achieved by changing the pulse height from 0.7 to 1.1 V for long-term potentiation (LTP) and from -0.9 to -1.3 V for long-term depression (LTD) having gradual conductance change for both P and D cases. The synaptic features such as paired-pulse facilitation (PPF) and spike time-dependent plasticity (STDP) are measured using consecutive AC pulses. These unique features confirm that the synaptic device has excellent capability for the application in the brain-inspired computing systems.

Original language	English
Pages (from-to)	2093-2096
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	43
Issue number	12
DOIs	https://doi.org/10.1109/LED.2022.3217983
State	Published - 1 Dec 2022

Keywords

Memristor
PPF
STDP
synapse

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10.1109/LED.2022.3217983

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title = "Enhanced Synaptic Features of ZnO/TaOxBilayer Invisible Memristor for Brain-Inspired Computing",

abstract = "In this letter, we present a transparent bilayer ZnO/TaOx memristive synapse for brain-inspired computing. The device shows excellent AC endurance (109 cycles) and high-temperature retention (104 s) without any degradation at 100 °C. The device exhibits highly stable repetitive 5130 potentiation (P) and depression (D) epochs with 1.026 M pulses. The multilevel characteristics (MLC) of the device are achieved by changing the pulse height from 0.7 to 1.1 V for long-term potentiation (LTP) and from -0.9 to -1.3 V for long-term depression (LTD) having gradual conductance change for both P and D cases. The synaptic features such as paired-pulse facilitation (PPF) and spike time-dependent plasticity (STDP) are measured using consecutive AC pulses. These unique features confirm that the synaptic device has excellent capability for the application in the brain-inspired computing systems.",

keywords = "Memristor, PPF, STDP, synapse",

author = "Dayanand Kumar and Keong, {Lai Boon} and Nazek El-Atab and Tseng, {Tseung Yuen}",

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AU - Keong, Lai Boon

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AU - Tseng, Tseung Yuen

PY - 2022/12/1

Y1 - 2022/12/1

N2 - In this letter, we present a transparent bilayer ZnO/TaOx memristive synapse for brain-inspired computing. The device shows excellent AC endurance (109 cycles) and high-temperature retention (104 s) without any degradation at 100 °C. The device exhibits highly stable repetitive 5130 potentiation (P) and depression (D) epochs with 1.026 M pulses. The multilevel characteristics (MLC) of the device are achieved by changing the pulse height from 0.7 to 1.1 V for long-term potentiation (LTP) and from -0.9 to -1.3 V for long-term depression (LTD) having gradual conductance change for both P and D cases. The synaptic features such as paired-pulse facilitation (PPF) and spike time-dependent plasticity (STDP) are measured using consecutive AC pulses. These unique features confirm that the synaptic device has excellent capability for the application in the brain-inspired computing systems.

AB - In this letter, we present a transparent bilayer ZnO/TaOx memristive synapse for brain-inspired computing. The device shows excellent AC endurance (109 cycles) and high-temperature retention (104 s) without any degradation at 100 °C. The device exhibits highly stable repetitive 5130 potentiation (P) and depression (D) epochs with 1.026 M pulses. The multilevel characteristics (MLC) of the device are achieved by changing the pulse height from 0.7 to 1.1 V for long-term potentiation (LTP) and from -0.9 to -1.3 V for long-term depression (LTD) having gradual conductance change for both P and D cases. The synaptic features such as paired-pulse facilitation (PPF) and spike time-dependent plasticity (STDP) are measured using consecutive AC pulses. These unique features confirm that the synaptic device has excellent capability for the application in the brain-inspired computing systems.

KW - Memristor

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Enhanced Synaptic Features of ZnO/TaO_xBilayer Invisible Memristor for Brain-Inspired Computing

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Keywords

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