Enhanced reliability and uniformity for Ge pMOSFET with low temperature supercritical fluid treatment

Dun Bao Ruan, Kuei Shu Chang-Liao*, Ji Syuan Li, Bo Lien Kuo, Zi Qin Hong, Guan Ting Liu, Po Tsun Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Significant improvement on uniformity and reliability characteristics in Ge pMOSFET are achieved with a novel low temperature supercritical phase CO2 fluid treatment with H2O cosolvent. Devices with the proposed treatment also exhibit a lower subthreshold swing, a higher on/off current ratio, and a lower interface trap density. The improvement can be attributed to the reduction of oxygen vacancy and low oxidation states in the interfacial layer (IL), and the quality enhancement on both IL and high-k gate stack.

Original languageEnglish
Article number127632
JournalSurface and Coatings Technology
Volume423
DOIs
StatePublished - 15 Oct 2021

Keywords

  • Cosolvent
  • Ge pMOSFET
  • Low temperature supercritical fluid treatment
  • Reliability
  • Uniformity

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