Significant improvement on uniformity and reliability characteristics in Ge pMOSFET are achieved with a novel low temperature supercritical phase CO2 fluid treatment with H2O cosolvent. Devices with the proposed treatment also exhibit a lower subthreshold swing, a higher on/off current ratio, and a lower interface trap density. The improvement can be attributed to the reduction of oxygen vacancy and low oxidation states in the interfacial layer (IL), and the quality enhancement on both IL and high-k gate stack.
- Ge pMOSFET
- Low temperature supercritical fluid treatment