Enhanced Properties in Conductive-Bridge Resistive Switching Memory with Oxide-Nitride Bilayer Structure

Tsung Ling Tsai; Fa Shen Jiang; Chia Hua Ho; Chen Hsi Lin; Tseung-Yuen Tseng

doi:10.1109/LED.2016.2602886

Enhanced Properties in Conductive-Bridge Resistive Switching Memory with Oxide-Nitride Bilayer Structure

Tsung Ling Tsai, Fa Shen Jiang, Chia Hua Ho, Chen Hsi Lin, Tseung-Yuen Tseng^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

In this letter, we propose a new method to improve resistive switching properties in ZrO₂-based conductive-bridge resistive memory devices by introducing a thin AlN layer with high thermal conductivity between the ZrO₂ layer and TiN bottom electrode. Compared with the Cu/TiW/ZrO₂/TiN single-layer device, the Cu/TiW/ZrO₂/AlN/TiN bilayer device exhibits lower operation voltages, higher endurance performance, and higher resistive switching uniformity. These substantial improvements in the resistive switching properties are attributed to the formation and rupture of conductive filament that can be effectively controlled in the device after inserting the AlN layer.

Original language	English
Article number	7552563
Pages (from-to)	1284-1287
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	37
Issue number	10
DOIs	https://doi.org/10.1109/LED.2016.2602886
State	Published - Oct 2016

Keywords

AlN
Thermal conductivity
conductive filament (CF)
conductive-bridge random access memory (CBRAM)

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10.1109/LED.2016.2602886

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title = "Enhanced Properties in Conductive-Bridge Resistive Switching Memory with Oxide-Nitride Bilayer Structure",

abstract = "In this letter, we propose a new method to improve resistive switching properties in ZrO2-based conductive-bridge resistive memory devices by introducing a thin AlN layer with high thermal conductivity between the ZrO2 layer and TiN bottom electrode. Compared with the Cu/TiW/ZrO2/TiN single-layer device, the Cu/TiW/ZrO2/AlN/TiN bilayer device exhibits lower operation voltages, higher endurance performance, and higher resistive switching uniformity. These substantial improvements in the resistive switching properties are attributed to the formation and rupture of conductive filament that can be effectively controlled in the device after inserting the AlN layer.",

keywords = "AlN, Thermal conductivity, conductive filament (CF), conductive-bridge random access memory (CBRAM)",

author = "Tsai, {Tsung Ling} and Jiang, {Fa Shen} and Ho, {Chia Hua} and Lin, {Chen Hsi} and Tseung-Yuen Tseng",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

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T1 - Enhanced Properties in Conductive-Bridge Resistive Switching Memory with Oxide-Nitride Bilayer Structure

AU - Tsai, Tsung Ling

AU - Jiang, Fa Shen

AU - Ho, Chia Hua

AU - Lin, Chen Hsi

AU - Tseng, Tseung-Yuen

PY - 2016/10

Y1 - 2016/10

N2 - In this letter, we propose a new method to improve resistive switching properties in ZrO2-based conductive-bridge resistive memory devices by introducing a thin AlN layer with high thermal conductivity between the ZrO2 layer and TiN bottom electrode. Compared with the Cu/TiW/ZrO2/TiN single-layer device, the Cu/TiW/ZrO2/AlN/TiN bilayer device exhibits lower operation voltages, higher endurance performance, and higher resistive switching uniformity. These substantial improvements in the resistive switching properties are attributed to the formation and rupture of conductive filament that can be effectively controlled in the device after inserting the AlN layer.

AB - In this letter, we propose a new method to improve resistive switching properties in ZrO2-based conductive-bridge resistive memory devices by introducing a thin AlN layer with high thermal conductivity between the ZrO2 layer and TiN bottom electrode. Compared with the Cu/TiW/ZrO2/TiN single-layer device, the Cu/TiW/ZrO2/AlN/TiN bilayer device exhibits lower operation voltages, higher endurance performance, and higher resistive switching uniformity. These substantial improvements in the resistive switching properties are attributed to the formation and rupture of conductive filament that can be effectively controlled in the device after inserting the AlN layer.

KW - AlN

KW - Thermal conductivity

KW - conductive filament (CF)

KW - conductive-bridge random access memory (CBRAM)

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M3 - Article

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JF - Ieee Electron Device Letters

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Enhanced Properties in Conductive-Bridge Resistive Switching Memory with Oxide-Nitride Bilayer Structure

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