Enhanced performance of poly-Si thin film transistors using fluorine ions implantation

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Hsiao-Wen Zan, Ya-Hsiang Tai, Che Yu Yang, Yung Chun Wu, Hsin Chou Liu, Wei Ren Chen, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


Fluorine (F)-implanted polycrystalline silicon thin-film transistor (poly-Si TFT) are proposed for the enhancement of device performance. A significant improvement in electrical characteristics, such as I ON/IOFF ratio, and field effect mobility, can be realized in the new thin-film transistor. The field effect mobility for F-implanted poly-Si TFTs is 53.82 cm2/V-s, and higher than 19.74 cm 2/V-s in conventional SPC poly-Si TFTs. Furthermore, the F-implanted poly-Si TFT exhibits high immunity against hot carrier effect and improved electrical reliability. The manufacturing processes are simple and without additional thermal annealing steps, thereby compatible with the conventional TFT fabrication processes.

Original languageEnglish
Pages (from-to)G246-G248
JournalElectrochemical and Solid-State Letters
Issue number9
StatePublished - 2005


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