Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface

Yen Chih Chiang; Bing Cheng Lin; Kuo Ju Chen; Chien-Chung Lin; Po-Tsung Lee; Hao-Chung Kuo

doi:10.1186/1556-276X-9-699

Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface

Yen Chih Chiang, Bing Cheng Lin, Kuo Ju Chen, Chien-Chung Lin, Po-Tsung Lee, Hao-Chung Kuo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

For the purpose of light extraction and efficiency enhancement, the nitride-based ultraviolet vertical-injection light-emitting diodes (UV-VLEDs) with non-insulation current blocking layer (n-CBL) and optimized textured surface were fabricated. The optical and electrical characteristics were investigated in this n-CBL UV-VLED. Furthermore, the efficiency of optimized structure was improved by 5 ~ 6 times compared to our reference.

Original language	English
Article number	699
Number of pages	8
Journal	Nanoscale Research Letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-9-699
State	Published - 29 Dec 2014

Keywords

Current blocking layer
Gallium nitride
Light-emitting diode
Textured surface
Ultraviolet
Vertical injection

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10.1186/1556-276X-9-699

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title = "Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface",

abstract = "For the purpose of light extraction and efficiency enhancement, the nitride-based ultraviolet vertical-injection light-emitting diodes (UV-VLEDs) with non-insulation current blocking layer (n-CBL) and optimized textured surface were fabricated. The optical and electrical characteristics were investigated in this n-CBL UV-VLED. Furthermore, the efficiency of optimized structure was improved by 5 ~ 6 times compared to our reference.",

keywords = "Current blocking layer, Gallium nitride, Light-emitting diode, Textured surface, Ultraviolet, Vertical injection",

author = "Chiang, {Yen Chih} and Lin, {Bing Cheng} and Chen, {Kuo Ju} and Chien-Chung Lin and Po-Tsung Lee and Hao-Chung Kuo",

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AU - Chiang, Yen Chih

AU - Lin, Bing Cheng

AU - Chen, Kuo Ju

AU - Lin, Chien-Chung

AU - Lee, Po-Tsung

AU - Kuo, Hao-Chung

PY - 2014/12/29

Y1 - 2014/12/29

N2 - For the purpose of light extraction and efficiency enhancement, the nitride-based ultraviolet vertical-injection light-emitting diodes (UV-VLEDs) with non-insulation current blocking layer (n-CBL) and optimized textured surface were fabricated. The optical and electrical characteristics were investigated in this n-CBL UV-VLED. Furthermore, the efficiency of optimized structure was improved by 5 ~ 6 times compared to our reference.

AB - For the purpose of light extraction and efficiency enhancement, the nitride-based ultraviolet vertical-injection light-emitting diodes (UV-VLEDs) with non-insulation current blocking layer (n-CBL) and optimized textured surface were fabricated. The optical and electrical characteristics were investigated in this n-CBL UV-VLED. Furthermore, the efficiency of optimized structure was improved by 5 ~ 6 times compared to our reference.

KW - Current blocking layer

KW - Gallium nitride

KW - Light-emitting diode

KW - Textured surface

KW - Ultraviolet

KW - Vertical injection

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ER -

Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface

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