Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment

Wei Ren Chen, Dun Bao Ruan, Kuei Shu Chang-Liao*, Hao Yan Wang, Guang Li Luo, Yu Chuan Chiu, Ting Kai Kuan, Po Tsun Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A novel Ge condensation process using low temperature supercritical phase fluid (SCF) was proposed on SiGe/Si GAAFET. Device with a Ge condensation by SCF treatment exhibits higher rmION, lower rmIOFF, larger rmION/rmIOFF, lower S.S., higher uniformity and better reliability, due to the enhanced mobility by the reduction of vacancy defects in SiGe and interface traps or/and reversed tensile strain in Si.

Original languageEnglish
Title of host publication2023 Silicon Nanoelectronics Workshop, SNW 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages25-26
Number of pages2
ISBN (Electronic)9784863488083
DOIs
StatePublished - 2023
Event26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan
Duration: 11 Jun 202312 Jun 2023

Publication series

Name2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference26th Silicon Nanoelectronics Workshop, SNW 2023
Country/TerritoryJapan
CityKyoto
Period11/06/2312/06/23

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