Enhanced performance and reliability of NILC-TFTs using FSG buffer layer

Chien Chih Chen; Yew-Chuhg Wu; Chih Pang Chang

doi:10.1016/j.matchemphys.2011.11.080

Enhanced performance and reliability of NILC-TFTs using FSG buffer layer

Chien Chih Chen, Yew-Chuhg Wu^*, Chih Pang Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILCTFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs.

Original language	English
Pages (from-to)	637-640
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	132
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2011.11.080
State	Published - 15 Feb 2012

Keywords

(NILC)
(poly-Si TFTs)
Fluorinated-silicate-glass (FSG)
Ni-metal-induced lateral crystallization
Polycrystalline silicon thin-film transistors

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10.1016/j.matchemphys.2011.11.080

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title = "Enhanced performance and reliability of NILC-TFTs using FSG buffer layer",

abstract = "A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILCTFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs.",

keywords = "(NILC), (poly-Si TFTs), Fluorinated-silicate-glass (FSG), Ni-metal-induced lateral crystallization, Polycrystalline silicon thin-film transistors",

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AU - Chen, Chien Chih

AU - Wu, Yew-Chuhg

AU - Chang, Chih Pang

PY - 2012/2/15

Y1 - 2012/2/15

N2 - A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILCTFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs.

AB - A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILCTFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs.

KW - (NILC)

KW - (poly-Si TFTs)

KW - Fluorinated-silicate-glass (FSG)

KW - Ni-metal-induced lateral crystallization

KW - Polycrystalline silicon thin-film transistors

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DO - 10.1016/j.matchemphys.2011.11.080

M3 - Article

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VL - 132

SP - 637

EP - 640

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 2-3

ER -

Enhanced performance and reliability of NILC-TFTs using FSG buffer layer

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Keywords

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