Enhanced performance and reliability of NILC-TFTs using FSG buffer layer

Chien Chih Chen, Yew-Chuhg Wu*, Chih Pang Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILCTFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs.

Original languageEnglish
Pages (from-to)637-640
Number of pages4
JournalMaterials Chemistry and Physics
Volume132
Issue number2-3
DOIs
StatePublished - 15 Feb 2012

Keywords

  • (NILC)
  • (poly-Si TFTs)
  • Fluorinated-silicate-glass (FSG)
  • Ni-metal-induced lateral crystallization
  • Polycrystalline silicon thin-film transistors

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