Enhanced light output power of thin film GaN-based high voltage light-emitting diodes

Ching Ho Tien; Ken Yen Chen; Chen Peng Hsu; Ray-Hua Horng

doi:10.1364/OE.22.0A1462

Enhanced light output power of thin film GaN-based high voltage light-emitting diodes

Ching Ho Tien^*, Ken Yen Chen, Chen Peng Hsu, Ray-Hua Horng

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The characteristics of high-voltage light-emitting diodes (HVLEDs) consisting of a 64-cell LED array were investigated by employing various LED structures. Two types of HVLED were examined: a standard HVLED with a single roughened indium tin oxide (ITO) surface grown on a sapphire substrate and a thin-film HVLED (TF-HVLED) with a roughened n-GaN and ITO double side transferred to a mirror/silicon substrate. At an injection current of 24 mA, the output powers of the HVLEDs fabricated using a sapphire substrate and those fabricated using a mirror/silicon substrate were 170 and 216 mW, respectively. Because the TF-HVLED exhibited improved thermal dissipation and light extraction, it produced a greater output power than the HVLED fabricated using the sapphire substrate did.

Original language	English
Pages (from-to)	A1462-A1468
Journal	Optics Express
Volume	22
Issue number	21
DOIs	https://doi.org/10.1364/OE.22.0A1462
State	Published - 20 Oct 2014

Access to Document

10.1364/OE.22.0A1462

Cite this

@article{b9088157f2f9464bb6e62edda1516fd5,

title = "Enhanced light output power of thin film GaN-based high voltage light-emitting diodes",

abstract = "The characteristics of high-voltage light-emitting diodes (HVLEDs) consisting of a 64-cell LED array were investigated by employing various LED structures. Two types of HVLED were examined: a standard HVLED with a single roughened indium tin oxide (ITO) surface grown on a sapphire substrate and a thin-film HVLED (TF-HVLED) with a roughened n-GaN and ITO double side transferred to a mirror/silicon substrate. At an injection current of 24 mA, the output powers of the HVLEDs fabricated using a sapphire substrate and those fabricated using a mirror/silicon substrate were 170 and 216 mW, respectively. Because the TF-HVLED exhibited improved thermal dissipation and light extraction, it produced a greater output power than the HVLED fabricated using the sapphire substrate did.",

author = "Tien, {Ching Ho} and Chen, {Ken Yen} and Hsu, {Chen Peng} and Ray-Hua Horng",

note = "Publisher Copyright: {\textcopyright} 2014 Optical Society of America.",

year = "2014",

month = oct,

day = "20",

doi = "10.1364/OE.22.0A1462",

language = "English",

volume = "22",

pages = "A1462--A1468",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "21",

}

TY - JOUR

T1 - Enhanced light output power of thin film GaN-based high voltage light-emitting diodes

AU - Tien, Ching Ho

AU - Chen, Ken Yen

AU - Hsu, Chen Peng

AU - Horng, Ray-Hua

PY - 2014/10/20

Y1 - 2014/10/20

N2 - The characteristics of high-voltage light-emitting diodes (HVLEDs) consisting of a 64-cell LED array were investigated by employing various LED structures. Two types of HVLED were examined: a standard HVLED with a single roughened indium tin oxide (ITO) surface grown on a sapphire substrate and a thin-film HVLED (TF-HVLED) with a roughened n-GaN and ITO double side transferred to a mirror/silicon substrate. At an injection current of 24 mA, the output powers of the HVLEDs fabricated using a sapphire substrate and those fabricated using a mirror/silicon substrate were 170 and 216 mW, respectively. Because the TF-HVLED exhibited improved thermal dissipation and light extraction, it produced a greater output power than the HVLED fabricated using the sapphire substrate did.

AB - The characteristics of high-voltage light-emitting diodes (HVLEDs) consisting of a 64-cell LED array were investigated by employing various LED structures. Two types of HVLED were examined: a standard HVLED with a single roughened indium tin oxide (ITO) surface grown on a sapphire substrate and a thin-film HVLED (TF-HVLED) with a roughened n-GaN and ITO double side transferred to a mirror/silicon substrate. At an injection current of 24 mA, the output powers of the HVLEDs fabricated using a sapphire substrate and those fabricated using a mirror/silicon substrate were 170 and 216 mW, respectively. Because the TF-HVLED exhibited improved thermal dissipation and light extraction, it produced a greater output power than the HVLED fabricated using the sapphire substrate did.

UR - http://www.scopus.com/inward/record.url?scp=84908170750&partnerID=8YFLogxK

U2 - 10.1364/OE.22.0A1462

DO - 10.1364/OE.22.0A1462

M3 - Article

C2 - 25607303

AN - SCOPUS:84908170750

SN - 1094-4087

VL - 22

SP - A1462-A1468

JO - Optics Express

JF - Optics Express

IS - 21

ER -

Enhanced light output power of thin film GaN-based high voltage light-emitting diodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this